Issued Patents All Time
Showing 701–725 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7232774 | Polycrystalline silicon layer with nano-grain structure and method of manufacture | Ashima B. Chakravarti, Romany Ghali, Oleg Gluschenkov, Michael A. Gribelyuk, Woo-Hyeong Lee +1 more | 2007-06-19 |
| 7230296 | Self-aligned low-k gate cap | Oleg Gluschenkov, Jack A. Mandelman, Michael P. Belyansky | 2007-06-12 |
| 7224033 | Structure and method for manufacturing strained FINFET | Huilong Zhu | 2007-05-29 |
| 7220626 | Structure and method for manufacturing planar strained Si/SiGe substrate with multiple orientations and different stress levels | Huilong Zhu, Philip J. Oldiges, Meikei Ieong, Min Yang, Huajie Chen | 2007-05-22 |
| 7211490 | Ultra thin channel MOSFET | Thomas S. Kanarsky, Ying Zhang, Huilong Zhu, Meikei Ieong, Omer H. Dokumaci | 2007-05-01 |
| 7205206 | Method of fabricating mobility enhanced CMOS devices | Michael P. Belyansky, Oleg Gluschenkov | 2007-04-17 |
| 7205185 | Self-aligned planar double-gate process by self-aligned oxidation | Omer H. Dokumaci, Kathryn Guarini, Suryanarayan G. Hegde, Meikei Ieong, Erin C. Jones | 2007-04-17 |
| 7205207 | High performance strained CMOS devices | Oleg Gluschenkov | 2007-04-17 |
| 7202132 | Protecting silicon germanium sidewall with silicon for strained silicon/silicon germanium MOSFETs | Huilong Zhu, Dan M. Mocuta | 2007-04-10 |
| 7202516 | CMOS transistor structure including film having reduced stress by exposure to atomic oxygen | Michael P. Belyansky, Diane C. Boyd, Oleg Gluschenkov | 2007-04-10 |
| 7183613 | Method and structure for enhancing both NMOSFET and PMOSFET performance with a stressed film | Huilong Zhu, Jing Wang, Zhibin Ren | 2007-02-27 |
| 7173312 | Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification | Cyril Cabral, Jr., Thomas S. Kanarsky, Xiao Hu Liu, Huilong Zhu | 2007-02-06 |
| 7122849 | Stressed semiconductor device structures having granular semiconductor material | Michael P. Belyansky, Diane C. Boyd, Dureseti Chidambarrao, Oleg Gluschenkov | 2006-10-17 |
| 7119403 | High performance strained CMOS devices | Oleg Gluschenkov | 2006-10-10 |
| 7105391 | Planar pedestal multi gate device | John Charles Petrus, Ying Zhang | 2006-09-12 |
| 7098477 | Structure and method of manufacturing a finFET device having stacked fins | Huilong Zhu | 2006-08-29 |
| 7094634 | Structure and method for manufacturing planar SOI substrate with multiple orientations | Huilong Zhu, Meikei Ieong, Phillip J. Oldiges, Min Yang | 2006-08-22 |
| 7091566 | Dual gate FinFet | Huilong Zhu, Jochen Beintner, Ying Zhang | 2006-08-15 |
| 7091069 | Ultra thin body fully-depleted SOI MOSFETs | Meikei Ieong, Zhibin Ren, Paul M. Solomon, Min Yang | 2006-08-15 |
| 7087952 | Dual function FinFET, finmemory and method of manufacture | Huilong Zhu, Jochen Beintner | 2006-08-08 |
| 7075150 | Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique | Diane C. Boyd, Meikei Ieong, Devendra K. Sadana | 2006-07-11 |
| 7049662 | Structure and method to fabricate FinFET devices | Wesley C. Natzle | 2006-05-23 |
| 7041600 | Methods of planarization | Omer H. Dokumaci, David V. Horak, Fen F. Jamin | 2006-05-09 |
| 7018891 | Ultra-thin Si channel CMOS with improved series resistance | Meikei Ieong, Thomas S. Kanarsky | 2006-03-28 |
| 7015082 | High mobility CMOS circuits | Oleg Gluschenkov, Huilong Zhu | 2006-03-21 |