SH

Suryanarayan G. Hegde

IBM: 19 patents #5,782 of 70,183Top 9%
Infineon Technologies Ag: 4 patents #32 of 446Top 8%
📍 Hollowville, NY: #1 of 5 inventorsTop 20%
🗺 New York: #7,406 of 115,490 inventorsTop 7%
Overall (All Time): #241,702 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Showing 1–19 of 19 patents

Patent #TitleCo-InventorsDate
7453123 Self-aligned planar double-gate transistor structure Omer H. Dokumaci, Bruce B. Doris, Kathryn Guarini, Meikei Ieong, Erin C. Jones 2008-11-18
7205185 Self-aligned planar double-gate process by self-aligned oxidation Omer H. Dokumaci, Bruce B. Doris, Kathryn Guarini, Meikei Ieong, Erin C. Jones 2007-04-17
6878978 CMOS performance enhancement using localized voids and extended defects Omer H. Dokumaci, Dureseti Chidambarrao 2005-04-12
6858488 CMOS performance enhancement using localized voids and extended defects Omer H. Dokumaci, Dureseti Chidambarrao 2005-02-22
6833569 Self-aligned planar double-gate process by amorphization Omer H. Dokumaci, Bruce B. Doris, Meikei Ieong, Erin C. Jones 2004-12-21
6803270 CMOS performance enhancement using localized voids and extended defects Omer H. Dokumachi, Dureseti Chidambarrao 2004-10-12
6727142 Orientation independent oxidation of nitrided silicon Oleg Gluschenkov, Helmut Tews 2004-04-27
6569781 Method of forming an ultra-thin oxide layer on a silicon substrate by implantation of nitrogen through a sacrificial layer and subsequent annealing prior to oxide formation Omer H. Dokumaci, Richard D. Kaplan, Mukesh V. Khare 2003-05-27
6514843 Method of enhanced oxidation of MOS transistor gate corners Omer H. Dokumaci, Oleg Gluschenkov, Richard D. Kaplan, Mukesh V. Khare 2003-02-04
6387782 Process of forming an ultra-shallow junction dopant layer having a peak concentration within a dielectric layer Hiroyuki Akatsu, Omer H. Dokumaci, Yujun Li, Rajesh Rengarajan, Paul A. Ronsheim 2002-05-14
6348388 Process for fabricating a uniform gate oxide of a vertical transistor Johnathan E. Faltermeier, Ulrike Gruening, Rajarao Jammy, Brian Lee, Helmut Tews 2002-02-19
6329704 Ultra-shallow junction dopant layer having a peak concentration within a dielectric layer Hiroyuki Akatsu, Omer H. Dokumaci, Yujun Li, Rajesh Rengarajan, Paul A. Ronsheim 2001-12-11
6297086 Application of excimer laser anneal to DRAM processing Kam-Leung Lee, Jack A. Mandelman, Carl Radens 2001-10-02
6150670 Process for fabricating a uniform gate oxide of a vertical transistor Johnathan E. Faltermeier, Ulrike Gruening, Rajarao Jammy, Brian Lee, Helmut Tews 2000-11-21
5977787 Large area multiple-chip probe assembly and method of making the same Gobina Das, Paul M. Gaschke, Mark R. LaForce, Dale Curtis McHerron, Charles H. Perry +1 more 1999-11-02
5875171 Interlocking disk stack that prevents disk slip in a storage disk David W. Albrecht, James William Berberich, Thomas F. Roth 1999-02-23
5392177 Sealed DASD having humidity control and method of making same Timothy J. Chainer, Emanuel I. Cooper, Chandrasekhar Narayan 1995-02-21
5115664 Tunable feedback transducer for transient friction measurement Anthony P. Praino, Steven J. Root, Muthuthamby Sri-Jayantha 1992-05-26
4931887 Capacitive measurement and control of the fly height of a recording slider Robert A. Scranton, Edward J. Yarmchuk 1990-06-05