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Patricia M. Mooney

IBM: 18 patents #6,125 of 70,183Top 9%
📍 Campion Road, NY: #7 of 113 inventorsTop 7%
🗺 New York: #7,917 of 115,490 inventorsTop 7%
Overall (All Time): #258,125 of 4,157,543Top 7%
18
Patents All Time

Issued Patents All Time

Showing 1–18 of 18 patents

Patent #TitleCo-InventorsDate
8409974 Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same Guy M. Cohen 2013-04-02
7812340 Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same Guy M. Cohen 2010-10-12
7723791 Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels Huilong Zhu, Bruce B. Doris, Huajie Chen, Stephen W. Bedell 2010-05-25
7709352 In-place bonding of microstructures Guy M. Cohen, Vamsi K. Paruchuri 2010-05-04
7456081 In-place bonding of microstructures Guy M. Cohen, Vamsi K. Paruchuri 2008-11-25
7423303 Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels Huilong Zhu, Bruce B. Doris, Huajie Chen, Stephen W. Bedell 2008-09-09
7396747 Hetero-integrated strained silicon n- and p-MOSFETs Diane C. Boyd, Juan Cai, Kevin K. Chan, Kern Rim 2008-07-08
7273800 Hetero-integrated strained silicon n- and p-MOSFETs Diane C. Boyd, Juan Cai, Kevin K. Chan, Kern Rim 2007-09-25
7271043 Method for manufacturing strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels Huilong Zhu, Bruce B. Doris, Huajie Chen, Stephen W. Bedell 2007-09-18
7238589 In-place bonding of microstructures Guy M. Cohen, Vamsi K. Paruchuri 2007-07-03
7084431 High speed composite p-channel Si/SiGe heterostructure for field effect devices Jack O. Chu, Richard Hammond, Khalid EzzEldin Ismail, Steven J. Koester, John A. Ott 2006-08-01
6858502 High speed composite p-channel Si/SiGe heterostructure for field effect devices Jack O. Chu, Richard Hammond, Khalid EzzEldin Ismail, Steven J. Koester, John A. Ott 2005-02-22
6855649 Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing Silke Christiansen, Jack O. Chu, Alfred Grill 2005-02-15
6833332 Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same Silke Christiansen, Alfred Grill 2004-12-21
6709903 Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing Silke Christiansen, Jack O. Chu, Alfred Grill 2004-03-23
6593625 Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing Silke Christiansen, Jack O. Chu, Alfred Grill 2003-07-15
6515335 Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same Silke Christiansen, Alfred Grill 2003-02-04
6350993 High speed composite p-channel Si/SiGe heterostructure for field effect devices Jack O. Chu, Richard Hammond, Khalid EzzEldin Ismail, Steven J. Koester, John A. Ott 2002-02-26