Issued Patents All Time
Showing 1–25 of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11757008 | Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor | Rytis Dargis, Andrew Clark, Rodney Pelzel, Michael S. Lebby | 2023-09-12 |
| 11611001 | Localized strain fields in epitaxial layer over cREO | Andrew Clark, Rodney Pelzel | 2023-03-21 |
| 11495670 | Integrated epitaxial metal electrodes | Rodney Pelzel, Andrew Clark, Rytis Dargis, Michael S. Lebby | 2022-11-08 |
| 11355340 | Semiconductor material having tunable permittivity and tunable thermal conductivity | Drew Nelson, Alan Gott, Rodney Pelzel, Andrew Clark | 2022-06-07 |
| 11355617 | Self-aligned collector heterojunction bipolar transistor (HBT) | Ranadeep Dutta, Stephen Alan FANELLI | 2022-06-07 |
| 10784348 | Porous semiconductor handle substrate | Stephen Alan FANELLI | 2020-09-22 |
| 10700012 | Porous silicon dicing | Stephen Alan FANELLI | 2020-06-30 |
| 10629735 | Reacted conductive gate electrodes and methods of making the same | Matthew T. Currie | 2020-04-21 |
| 10510581 | Methods of forming strained-semiconductor-on-insulator device structures | Thomas A. Langdo, Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2019-12-17 |
| 10418457 | Metal electrode with tunable work functions | Rytis Dargis, Andrew Clark, Rodney Pelzel | 2019-09-17 |
| 10290579 | Utilization of backside silicidation to form dual side contacted capacitor | Sinan Goktepeli, Plamen Vassilev Kolev, Michael A. Stuber, Shiqun Gu, Steve Fanelli | 2019-05-14 |
| 10164015 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2018-12-25 |
| 10158030 | CMOS and bipolar device integration including a tunable capacitor | Shiqun Gu, Gengming Tao, Ranadeep Dutta, Matthew Michael Nowak, Francesco Carobolante | 2018-12-18 |
| 10134837 | Porous silicon post processing | Stephen Alan FANELLI | 2018-11-20 |
| 10050145 | Methods for forming semiconductor device structures | Anthony J. Lochtefeld, Thomas A. Langdo, Matthew T. Currie, Eugene A. Fitzgerald | 2018-08-14 |
| 9923057 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2018-03-20 |
| 9847293 | Utilization of backside silicidation to form dual side contacted capacitor | Sinan Goktepeli, Plamen Vassilev Kolev, Michael A. Stuber, Shiqun Gu, Steve Fanelli | 2017-12-19 |
| 9812572 | Reacted conductive gate electrodes and methods of making the same | Matthew T. Currie | 2017-11-07 |
| 9780210 | Backside semiconductor growth | Sinan Goktepeli | 2017-10-03 |
| 9601623 | Methods for forming semiconductor device structures | Anthony J. Lochtefeld, Thomas A. Langdo, Matthew T. Currie, Eugene A. Fitzgerald | 2017-03-21 |
| 9548236 | Methods of forming strained-semiconductor-on-insulator device structures | Thomas A. Langdo, Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2017-01-17 |
| 9343539 | Reacted conductive gate electrodes and methods of making the same | Matthew T. Currie | 2016-05-17 |
| 9281376 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2016-03-08 |
| 9064930 | Methods for forming semiconductor device structures | Thomas A. Langdo, Anthony J. Lochtefeld, Matthew T. Currie, Eugene A. Fitzgerald | 2015-06-23 |
| 9048167 | Reacted conductive gate electrodes and methods of making the same | Matthew T. Currie | 2015-06-02 |