Issued Patents All Time
Showing 26–50 of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8809835 | RF circuits including transistors having strained material layers | Glyn Braithwaite, Matthew T. Currie | 2014-08-19 |
| 8785315 | Reacted conductive gate electrodes and methods of making the same | Matthew T. Currie | 2014-07-22 |
| 8748292 | Methods of forming strained-semiconductor-on-insulator device structures | Thomas A. Langdo, Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2014-06-10 |
| 8722495 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2014-05-13 |
| 8586452 | Methods for forming semiconductor device structures | Anthony J. Lochtefeld, Thomas A. Langdo, Matthew T. Currie, Eugene A. Fitzgerald | 2013-11-19 |
| 8344355 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2013-01-01 |
| 8247798 | RF circuits including transistors having strained material layers | Glyn Braithwaite, Matthew T. Currie | 2012-08-21 |
| 8129821 | Reacted conductive gate electrodes | Matthew T. Currie | 2012-03-06 |
| 8106380 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2012-01-31 |
| 8026534 | III-V semiconductor device structures | Thomas A. Langdo, Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2011-09-27 |
| 7906776 | RF circuits including transistors having strained material layers | Glyn Braithwaite, Matthew T. Currie | 2011-03-15 |
| 7884353 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2011-02-08 |
| 7846802 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2010-12-07 |
| 7838392 | Methods for forming III-V semiconductor device structures | Thomas A. Langdo, Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2010-11-23 |
| 7776697 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2010-08-17 |
| 7709828 | RF circuits including transistors having strained material layers | Glyn Braithwaite, Matthew T. Currie | 2010-05-04 |
| 7600620 | Apparatus and method for enabling a briefcase to carry a supplemental bag | — | 2009-10-13 |
| 7588994 | Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain | Thomas A. Langdo, Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2009-09-15 |
| 7425751 | Method to reduce junction leakage current in strained silicon on silicon-germanium devices | Narayanan Balasubramanian | 2008-09-16 |
| 7420201 | Strained-semiconductor-on-insulator device structures with elevated source/drain regions | Thomas A. Langdo, Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2008-09-02 |
| 7414259 | Strained germanium-on-insulator device structures | Thomas A. Langdo, Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2008-08-19 |
| 7297612 | Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes | Thomas A. Langdo, Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2007-11-20 |
| 7259388 | Strained-semiconductor-on-insulator device structures | Thomas A. Langdo, Matthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2007-08-21 |
| 7217603 | Methods of forming reacted conductive gate electrodes | Matthew T. Currie | 2007-05-15 |
| 7217668 | Gate technology for strained surface channel and strained buried channel MOSFET devices | Eugene A. Fitzgerald, Matthew T. Currie | 2007-05-15 |