NB

Narayanan Balasubramanian

AR Agency For Science, Technology And Research: 7 patents #100 of 2,337Top 5%
CM Chartered Semiconductor Manufacturing: 4 patents #148 of 840Top 20%
IM Institute Of Microelectronics: 3 patents #18 of 153Top 15%
NS National University Of Singapore: 2 patents #231 of 1,623Top 15%
📍 Singapore, SG: #434 of 13,971 inventorsTop 4%
Overall (All Time): #325,319 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Showing 1–15 of 15 patents

Patent #TitleCo-InventorsDate
8236595 Nanowire sensor, nanowire sensor array and method of fabricating the same Ajay Agarwal, Navab Singh, Rakesh Kumar, Ieng Kin Lao 2012-08-07
7682914 Fully salicided (FUCA) MOSFET structure Patrick Guo-Qiang Lo, Wei-Yip Loh, Ranganathan Nagarajan 2010-03-23
7439165 Method of fabricating tensile strained layers and compressive strain layers for a CMOS device Patrick Guo-Qiang Lo, Lakshmi Kanta Bera, Wei-Yip Loh, Balakumar Subramanian 2008-10-21
7425751 Method to reduce junction leakage current in strained silicon on silicon-germanium devices Richard Hammond 2008-09-16
7397090 Gate electrode architecture for improved work function tuning and method of manufacture Shajan Mathew, Lakshmi Kanta Bera 2008-07-08
7316950 Method of fabricating a CMOS device with dual metal gate electrodes Chang Seo Park, Byung Jin Cho 2008-01-08
7294890 Fully salicided (FUSA) MOSFET structure Patrick Guo-Qiang Lo, Wei-Yip Loh, Ranganathan Nagarajan 2007-11-13
6846720 Method to reduce junction leakage current in strained silicon on silicon-germanium devices Richard Hammond 2005-01-25
6664596 Stacked LDD high frequency LDMOSFET Jun Cai, Pang Dow Foo 2003-12-16
6551937 Process for device using partial SOI Cai Jun, Ren Chang Hong, Ranganathan Nagarajan, Yung Chii Liang 2003-04-22
6489203 Stacked LDD high frequency LDMOSFET Jun Cai, Pang Dow Foo 2002-12-03
6468853 Method of fabricating a shallow trench isolation structure with reduced local oxide recess near corner Palanivel Balasubramanian, Yelehanka Ramachandramurthy Pradeep, Chivkula Subrahmanyam 2002-10-22
6235591 Method to form gate oxides of different thicknesses on a silicon substrate Yelehanka Ramachandamurthy Pradeep, Jia Zhen Zheng, Alan Cuthbertson 2001-05-22
6200887 Method to form a smooth gate polysilicon sidewall in the fabrication of integrated circuits Palanivel Balasubramaniam, Yelehanka Ramachandramurthy Pradeep, Arjun Kumar Kantimahanti 2001-03-13
5767004 Method for forming a low impurity diffusion polysilicon layer Ching Win Kong, Chuck Jang 1998-06-16