Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9431243 | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication | Anthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Thomas A. Langdo | 2016-08-30 |
| 9219112 | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication | Anthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Thomas A. Langdo | 2015-12-22 |
| 8987028 | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication | Anthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Thomas A. Langdo | 2015-03-24 |
| 8809835 | RF circuits including transistors having strained material layers | Richard Hammond, Matthew T. Currie | 2014-08-19 |
| 8796734 | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication | Anthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Thomas A. Langdo | 2014-08-05 |
| 8704229 | Partial poly amorphization for channeling prevention | Peter Javorka | 2014-04-22 |
| 8629477 | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication | Anthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Thomas A. Langdo | 2014-01-14 |
| 8519436 | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication | Anthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Thomas A. Langdo | 2013-08-27 |
| 8324660 | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication | Anthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Thomas A. Langdo | 2012-12-04 |
| 8247798 | RF circuits including transistors having strained material layers | Richard Hammond, Matthew T. Currie | 2012-08-21 |
| 7906776 | RF circuits including transistors having strained material layers | Richard Hammond, Matthew T. Currie | 2011-03-15 |
| 7709828 | RF circuits including transistors having strained material layers | Richard Hammond, Matthew T. Currie | 2010-05-04 |
| 7109516 | Strained-semiconductor-on-insulator finFET device structures | Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2006-09-19 |
| 7074623 | Methods of forming strained-semiconductor-on-insulator finFET device structures | Anthony J. Lochtefeld, Thomas A. Langdo, Richard Hammond, Matthew T. Currie, Eugene A. Fitzgerald | 2006-07-11 |
| 6933518 | RF circuits including transistors having strained material layers | Richard Hammond, Matthew T. Currie | 2005-08-23 |
| 6680496 | Back-biasing to populate strained layer quantum wells | Richard Hammond | 2004-01-20 |