JK

Jakub Kedzierski

IBM: 14 patents #8,004 of 70,183Top 15%
MIT: 2 patents #2,550 of 9,367Top 30%
University of California: 1 patents #8,022 of 18,278Top 45%
📍 Nashua, NH: #96 of 1,592 inventorsTop 7%
🗺 New Hampshire: #769 of 12,181 inventorsTop 7%
Overall (All Time): #270,756 of 4,157,543Top 7%
17
Patents All Time

Issued Patents All Time

Showing 1–17 of 17 patents

Patent #TitleCo-InventorsDate
11777422 Multilayered microhydraulic actuators 2023-10-03
10297835 Flexible and implantable glucose fuel cell Rahul Sarpeshkar, Jeremy Muldavin, Todd A. Thorsen, Benjamin I. Rapoport, Michale Sean Fee 2019-05-21
7859060 Ultra thin silicon on insulator Kevin K. Chan, Raymond M. Sicina 2010-12-28
7816224 Method for fabricating an ultra thin silicon on insulator Kevin K. Chan, Raymond M. Sicina 2010-10-19
7659153 Sectional field effect devices and method of fabrication Ying Zhang, Bruce B. Doris, Thomas S. Kanarsky, Meikei Ieong 2010-02-09
7655557 CMOS silicide metal gate integration Ricky S. Amos, Diane C. Boyd, Cyril Cabral, Jr., Richard D. Kaplan, Victor Ku +6 more 2010-02-02
7413941 Method of fabricating sectional field effect devices Ying Zhang, Bruce B. Doris, Thomas S. Kanarsky, Meikei Ieong 2008-08-19
7411227 CMOS silicide metal gate integration Ricky S. Amos, Diane C. Boyd, Cyril Cabral, Jr., Richard D. Kaplan, Victor Ku +6 more 2008-08-12
7388258 Sectional field effect devices Ying Zhang, Bruce B. Doris, Thomas S. Kanarsky, Meikei Ieong 2008-06-17
7250658 Hybrid planar and FinFET CMOS devices Bruce B. Doris, Diane C. Boyd, Meikei Leong, Thomas S. Kanarsky, Min Yang 2007-07-31
7183182 Method and apparatus for fabricating CMOS field effect transistors Cyril Cabral, Jr., Meikei Ieong 2007-02-27
7151023 Metal gate MOSFET by full semiconductor metal alloy conversion Hasan M. Nayfeh, Mahender Kumar, Sunfei Fang, Cyril Cabral, Jr. 2006-12-19
7056782 CMOS silicide metal gate integration Ricky S. Amos, Diane C. Boyd, Cyril Cabral, Jr., Richard D. Kaplan, Victor Ku +6 more 2006-06-06
6927117 Method for integration of silicide contacts and silicide gate metals Cyril Cabral, Jr., Victor Ku, Christian Lavoie, Vijay Narayanan, An Steegen 2005-08-09
6911383 Hybrid planar and finFET CMOS devices Bruce B. Doris, Diane C. Boyd, Meikei Ieong, Thomas S. Kanarsky, Min Yang 2005-06-28
6846734 Method and process to make multiple-threshold metal gates CMOS technology Ricky S. Amos, Katayun Barmak, Diane C. Boyd, Cyril Cabral, Jr., Meikei Leong +1 more 2005-01-25
6413802 Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture Chenming Hu, Tsu-Jae King, Vivek Subramanian, Leland Chang, Xuejue Huang +4 more 2002-07-02