Issued Patents All Time
Showing 101–125 of 223 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9576809 | Etch suppression with germanium | Mikhail Korolik, Jingchun Zhang, Anchuan Wang, Jie Liu | 2017-02-21 |
| 9564341 | Gas-phase silicon oxide selective etch | Jingjing Xu, Anchuan Wang | 2017-02-07 |
| 9553102 | Tungsten separation | Xikun Wang, Jie Liu, Anchuan Wang | 2017-01-24 |
| 9540736 | Methods of etching films with reduced surface roughness | Benjamin Schmiege, Srinivas D. Nemani, Jeffrey W. Anthis, Xikun Wang, Jie Liu +1 more | 2017-01-10 |
| 9520303 | Aluminum selective etch | Xikun Wang, Anchuan Wang | 2016-12-13 |
| 9514932 | Flowable carbon for semiconductor processing | Abhijit Basu Mallick | 2016-12-06 |
| 9502258 | Anisotropic gap etch | Jun Xue, Ching-Mei Hsu, Zihui Li, Ludovic Godet, Anchuan Wang | 2016-11-22 |
| 9496167 | Integrated bit-line airgap formation and gate stack post clean | Vinod R. Purayath, Randhir P. S. Thakur, Shankar Venkataraman | 2016-11-15 |
| 9478434 | Chlorine-based hardmask removal | Xikun Wang, Mandar B. Pandit, Zhenjiang Cui, Mikhail Korolik, Anchuan Wang +1 more | 2016-10-25 |
| 9478432 | Silicon oxide selective removal | Zhijun Chen, Anchuan Wang | 2016-10-25 |
| 9472417 | Plasma-free metal etch | Jessica S. Kachian, Lin Xu, Soonam Park, Xikun Wang, Jeffrey W. Anthis | 2016-10-18 |
| 9449850 | Processing systems and methods for halide scavenging | Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen +5 more | 2016-09-20 |
| 9449843 | Selectively etching metals and metal nitrides conformally | Mikhail Korolik, David Thompson, Jeffrey W. Anthis, David Knapp, Benjamin Schmiege | 2016-09-20 |
| 9449845 | Selective titanium nitride etching | Jie Liu, Jingchun Zhang, Anchuan Wang, Seung Ho Park, Zhijun Chen +1 more | 2016-09-20 |
| 9449846 | Vertical gate separation | Jie Liu, Vinod R. Purayath, Xikun Wang, Anchuan Wang | 2016-09-20 |
| 9437451 | Radical-component oxide etch | Zhijun Chen, Jingchun Zhang, Ching-Mei Hsu, Seung Ho Park, Anchuan Wang | 2016-09-06 |
| 9418858 | Selective etch of silicon by way of metastable hydrogen termination | Anchuan Wang, Jingchun Zhang, Young S. Lee | 2016-08-16 |
| 9417515 | Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor | Soumendra N. Barman, Cara Beasley, Abhijit Basu Mallick, Ralf Hofmann | 2016-08-16 |
| 9412608 | Dry-etch for selective tungsten removal | Xikun Wang, Ching-Mei Hsu, Zihui Li, Anchuan Wang | 2016-08-09 |
| 9404178 | Surface treatment and deposition for reduced outgassing | Jingmei Liang, Xiaolin Chen, Shankar Venkataraman | 2016-08-02 |
| 9406523 | Highly selective doped oxide removal method | Zhijun Chen, Zihui Li, Anchuan Wang, Shankar Venkataraman | 2016-08-02 |
| 9396989 | Air gaps between copper lines | Vinod R. Purayath | 2016-07-19 |
| 9390914 | Wet oxidation process performed on a dielectric material formed from a flowable CVD process | Linlin Wang, Abhijit Basu Mallick | 2016-07-12 |
| 9390937 | Silicon-carbon-nitride selective etch | Zhijun Chen, Jingchun Zhang, Anchuan Wang | 2016-07-12 |
| 9384997 | Dry-etch selectivity | He Ren, Jang-Gyoo Yang, Jonghoon Baek, Anchuan Wang, Soonam Park +2 more | 2016-07-05 |