TW

Tina Wagner

IBM: 15 patents #7,450 of 70,183Top 15%
Overall (All Time): #323,892 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
8631375 Via selection in integrated circuit design Robert R. Arelt, Jeanne P. Bickford, Andrew D. Huber, Gustavo E. Tellez, Karl W. Vinson 2014-01-14
8141027 Automated sensitivity definition and calibration for design for manufacturing tools James A. Culp, Jason D. Hibbeler, Lars Liebmann 2012-03-20
7941780 Intersect area based ground rule for semiconductor design Albrik Avanessian, Henry A. Bonges, III, Dureseti Chidambarrao, Stephen E. Greco, Douglas W. Kemerer 2011-05-10
7700425 Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plug Werner Rausch, Sadanand V. Deshpande 2010-04-20
7337420 Methodology for layout-based modulation and optimization of nitride liner stress effect in compact models Dureseti Chidambarrao, Donald L. Jordan, Judith H. McCullen, David M. Onsongo, Richard Q. Williams 2008-02-26
6930030 Method of forming an electronic device on a recess in the surface of a thin film of silicon etched to a precise thickness Werner Rausch, Sadanand V. Deshpande 2005-08-16
6878624 Pre-anneal of CoSi, to prevent formation of amorphous layer between Ti-O-N and CoSi John Bruley, Cyril Cabral, Jr., Christian Lavoie, Yun-Yu Wang, Horati S. Wildman +1 more 2005-04-12
6869542 Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials Sadanand V. Desphande, David M. Dobuzinsky, Arpan Mahorowala, Richard S. Wise 2005-03-22
6660664 Structure and method for formation of a blocked silicide resistor James W. Adkisson, Arne Ballantine, Matthew D. Gallagher, Peter J. Geiss, Jeffrey D. Gilbert +6 more 2003-12-09
6436823 Method for forming a TiN layer on top of a metal silicide layer in a semiconductor structure and structure formed Cyril Cabral, Jr., Chung-Ping Eng, Lynne M. Gignac, Christian Lavoie, Patricia A. O'Neil +3 more 2002-08-20
6387790 Conversion of amorphous layer produced during IMP Ti deposition Anthony G. Domenicucci, Chung-Ping Eng, William J. Murphy, Yun-Yu Wang, Kwong Hon Wong 2002-05-14
6345399 Hard mask process to prevent surface roughness for selective dielectric etching Paul C. Jamison, Richard S. Wise, Hongwen Yan 2002-02-12
6121129 Method of contact structure formation Nancy Anne Greco, Stephen E. Greco 2000-09-19
6090722 Process for fabricating a semiconductor structure having a self-aligned spacer Michael D. Armacost, Sandra G. Malhotra, Richard S. Wise 2000-07-18
5811357 Process of etching an oxide layer Michael D. Armacost, Michael L. Passow, Dominic J. Schepis, Matthew Sendelbach, William C. Wille 1998-09-22