WW

William C. Wille

IBM: 16 patents #6,952 of 70,183Top 10%
SA Siemens Aktiengesellschaft: 1 patents #10,653 of 22,248Top 50%
Samsung: 1 patents #49,284 of 75,807Top 70%
Overall (All Time): #278,858 of 4,157,543Top 7%
17
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
7838390 Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein Jun Jung Kim, Joo-chan Kim, Jae-eon Park, Richard A. Conti, Zhao Lun +2 more 2010-11-23
7635899 Structure and method to form improved isolation in a semiconductor device Haining Yang, Thomas W. Dyer 2009-12-22
7550364 Stress engineering using dual pad nitride with selective SOI device architecture Dureseti Chidambarrao, William K. Henson, Kern Rim 2009-06-23
7202513 Stress engineering using dual pad nitride with selective SOI device architecture Dureseti Chidambarrao, William K. Henson, Kern Rim 2007-04-10
7183130 Magnetic random access memory and method of fabricating thereof Joachim Nuetzel, Xian Jay Ning 2007-02-27
7030031 Method for forming damascene structure utilizing planarizing material coupled with diffusion barrier material Daniel C. Edelstein, William J. Cote, Peter Biolsi, John Fritche, Allan Upham 2006-04-18
6762667 Micro electromechanical switch having self-aligned spacers Richard P. Volant, David Angell, Donald F. Canaperi, Joseph T. Kocis, Kevin S. Petrarca +1 more 2004-07-13
6621392 Micro electromechanical switch having self-aligned spacers Richard P. Volant, David Angell, Donald F. Canaperi, Joseph T. Kocis, Kevin S. Petrarca +1 more 2003-09-16
6593617 Field effect transistors with vertical gate side walls and method for making such transistors Diane C. Boyd, Stuart M. Burns, Hussein I. Hanafi, Yuan Taur 2003-07-15
6461529 Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme Diane C. Boyd, Stuart M. Burns, Hussein I. Hanafi, Waldemar Walter Kocon, Richard S. Wise 2002-10-08
6361402 Method for planarizing photoresist Donald F. Canaperi, Rangarajan Jagannathan, Mahadevaiyer Krishnan, Max G. Levy, Uma Satyendra +2 more 2002-03-26
6207353 Resist formulation which minimizes blistering during etching Michael D. Armacost, Willard E. Conley, Tina J. Cotler-Wagner, Ronald A. DellaGuardia, David M. Dobuzinsky +1 more 2001-03-27
6143635 Field effect transistors with improved implants and method for making such transistors Diane C. Boyd, Stuart M. Burns, Hussein I. Hanafi, Yuan Taur 2000-11-07
6093281 Baffle plate design for decreasing conductance lost during precipitation of polymer precursors in plasma etching chambers Richard Wise, David M. Dobuzinsky 2000-07-25
6040214 Method for making field effect transistors having sub-lithographic gates with vertical side walls Diane C. Boyd, Stuart M. Burns, Hussein I. Hanafi, Yuan Taur 2000-03-21
5976982 Methods for protecting device components from chemical mechanical polish induced defects Max G. Levy, Wolfgang Bergner, Bernhard Fiegl, George R. Goth, Paul C. Parries +3 more 1999-11-02
5811357 Process of etching an oxide layer Michael D. Armacost, Tina Wagner, Michael L. Passow, Dominic J. Schepis, Matthew Sendelbach 1998-09-22