Stuart M. Burns — 17 Patents at IBM

Stuart M. Burns has been granted 17 US patents while listed as an inventor at IBM. The first was granted in 1998 and the most recent in July 2003. Stuart M. Burns ranks #263,971 of 4,157,543 US inventors in our database (top 6.3%). Patent records list Stuart M. Burns in Ridgefield, CT, US.

Patents per Year

Issued Patents All Time

Showing 1–17 of 17 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
6593617	Field effect transistors with vertical gate side walls and method for making such transistors	Diane C. Boyd, Hussein I. Hanafi, Yuan Taur, William C. Wille	2003-07-15	$18,764,000
6461529	Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme	Diane C. Boyd, Hussein I. Hanafi, Waldemar Walter Kocon, William C. Wille, Richard S. Wise	2002-10-08	$10,352,000
6268226	Reactive ion etch loading measurement technique	David Angell, Waldemar Walter Kocon, Michael L. Passow	2001-07-31	$29,242,000
6258679	Sacrificial silicon sidewall for damascene gate formation	Hussein I. Hanafi	2001-07-10	$19,901,000
6143635	Field effect transistors with improved implants and method for making such transistors	Diane C. Boyd, Hussein I. Hanafi, Yuan Taur, William C. Wille	2000-11-07	$39,779,000
6077745	Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array	Hussein I. Hanafi, Jeffrey J. Welser, Waldemar Walter Kocon, Howard L. Kalter	2000-06-20	$29,799,000
6040214	Method for making field effect transistors having sub-lithographic gates with vertical side walls	Diane C. Boyd, Hussein I. Hanafi, Yuan Taur, William C. Wille	2000-03-21	$35,798,000
6040210	2F-square memory cell for gigabit memory applications	Hussein I. Hanafi	2000-03-21	$35,798,000
6033957	4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation	Hussein I. Hanafi, Jeffrey J. Welser, Waldemar Walter Kocon	2000-03-07	$24,867,000
6034389	Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array	Hussein I. Hanafi, Howard L. Kalter, Jeffrey J. Welser, Waldemar Walter Kocon	2000-03-07	$24,867,000
6013548	Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array	Hussein I. Hanafi, Howard L. Kalter, Jeffrey J. Welser, Waldemar Walter Kocon	2000-01-11	$34,320,000
5990509	2F-square memory cell for gigabit memory applications	Hussein J. Hanafi, Jeffrey J. Welser	1999-11-23	$40,306,000
5976986	Low pressure and low power C1.sub.2 /HC1 process for sub-micron metal etching	Munir D. Naeem, Rosemary Christie, Virinder Grewal, Walter W. Kocon, Masaki Narita +2 more	1999-11-02	$18,540,000
5895273	Silicon sidewall etching	Hussein I. Hanafi, Waldemar Walter Kocon, Jeffrey J. Welser	1999-04-20	$26,173,000
5874760	4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation	Hussein I. Hanafi, Jeffrey J. Welser, Waldemar Walter Kocon	1999-02-23	$8,993,000
5846884	Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing	Munir D. Naeem, Nancy Anne Greco, STEVE GRECO, Virinder Grewal, Ernest N. Levine +2 more	1998-12-08	$52,989,000
5759920	Process for making doped polysilicon layers on sidewalls	Hussein I. Hanafi, Waldemar Walter Kocon	1998-06-02	$5,806,000

Stuart M. Burns — 17 Patents

Patents per Year

Issued Patents All Time

Patent Widget