Issued Patents All Time
Showing 176–200 of 482 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11521968 | Channel structures with sub-fin dopant diffusion blocking layers | Cory Bomberger, Anand S. Murthy, Stephen M. Cea, Biswajeet Guha, Anupama Bowonder | 2022-12-06 |
| 11522048 | Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs | Cory Bomberger, Anand S. Murthy, Mark Bohr, Biswajeet Guha | 2022-12-06 |
| 11508577 | Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo +4 more | 2022-11-22 |
| 11495496 | Gate aligned contact and method to fabricate same | Oleg Golonzka, Swaminathan Sivakumar, Charles H. Wallace | 2022-11-08 |
| 11495672 | Increased transistor source/drain contact area using sacrificial source/drain layer | Dax M. Crum, Biswajeet Guha, William Hsu, Stephen M. Cea | 2022-11-08 |
| 11476344 | Contact resistance reduction employing germanium overlayer pre-contact metalization | Glenn A. Glass, Anand S. Murthy | 2022-10-18 |
| 11469323 | Ferroelectric gate stack for band-to-band tunneling reduction | Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz +2 more | 2022-10-11 |
| 11469299 | Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers | Glenn A. Glass, Anand S. Murthy, Biswajeet Guha, Dax M. Crum, Patrick H. Keys +2 more | 2022-10-11 |
| 11462536 | Integrated circuit structures having asymmetric source and drain structures | Anupama Bowonder, Rishabh Mehandru, Mark Bohr | 2022-10-04 |
| 11462541 | Memory cells based on vertical thin-film transistors | Juan G. Alzate Vinasco, Abhishek A. Sharma, Fatih Hamzaoglu, Bernhard Sell, Pei-Hua Wang +5 more | 2022-10-04 |
| 11456357 | Self-aligned gate edge architecture with alternate channel material | Biswajeet Guha, Anupama Bowonder, William Hsu, Szuya S. Liao, Mehmet O. Baykan | 2022-09-27 |
| 11456372 | Multi-height finfet device by selective oxidation | Seiyon Kim, Gopinath Bhimarasetti, Rafael Rios, Jack T. Kavalieros, Anand S. Murthy +1 more | 2022-09-27 |
| 11450750 | Thin-film transistors with vertical channels | Nazila Haratipour, Jack T. Kavalieros, Gilbert Dewey, Benjamin Chu-Kung, Seung Hoon Sung +3 more | 2022-09-20 |
| 11450739 | Germanium-rich nanowire transistor with relaxed buffer layer | Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Jack T. Kavalieros, Siddharth Chouksey +3 more | 2022-09-20 |
| 11450669 | Stacked thin-film transistor based embedded dynamic random-access memory | Abhishek A. Sharma, Juan G. Alzate-Vinasco, Fatih Hamzaoglu, Bernhard Sell, Pei-Hua Wang +5 more | 2022-09-20 |
| 11444205 | Contact stacks to reduce hydrogen in thin film transistor | Arnab Sen Gupta, Matthew V. Metz, Benjamin Chu-Kung, Abhishek A. Sharma, Van H. Le +7 more | 2022-09-13 |
| 11444159 | Field effect transistors with wide bandgap materials | Sean T. Ma, Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Cheng-Ying Huang +3 more | 2022-09-13 |
| 11437567 | Perpendicular spin transfer torque magnetic mechanism | Justin S. Brockman, Christopher J. Wiegand, MD Tofizur Rahman, Daniel Ouelette, Angeline Smith +7 more | 2022-09-06 |
| 11437511 | Multi-threshold voltage devices and associated techniques and configurations | Joseph M. Steigerwald, Jenny Hu, Ian R. Post | 2022-09-06 |
| 11437472 | Integrated circuit structures having germanium-based channels | Siddharth Chouksey, Glenn A. Glass, Anand S. Murthy, Harold W. Kennel, Jack T. Kavalieros +2 more | 2022-09-06 |
| 11430868 | Buried etch-stop layer to help control transistor source/drain depth | Rishabh Mehandru, Biswajeet Guha, Anupama Bowonder, Anand S. Murthy, Stephen M. Cea | 2022-08-30 |
| 11417781 | Gate-all-around integrated circuit structures including varactors | Ayan Kar, Saurabh Morarka, Carlos Nieva-Lozano, Kalyan C. Kolluru, Biswajeet Guha +2 more | 2022-08-16 |
| 11417775 | Nanowire thin film transistors with textured semiconductors | Shriram Shivaraman, Van H. Le, Abhishek A. Sharma, Gilbert Dewey, Benjamin Chu-Kung +2 more | 2022-08-16 |
| 11417770 | Vertical thin-film transistors between metal layers | Abhishek A. Sharma, Nazila Haratipour, Seung Hoon Sung, Benjamin Chu-Kung, Gilbert Dewey +5 more | 2022-08-16 |
| 11417655 | High-mobility semiconductor source/drain spacer | Gilbert Dewey, Matthew V. Metz, Anand S. Murthy, Willy Rachmady, Chandra S. Mohapatra +2 more | 2022-08-16 |