| 12426247 |
Capacitor connections in dielectric layers |
Travis W. Lajoie, Abhishek A. Sharma, Van H. Le, Chieh-Jen Ku, Pei-Hua Wang +13 more |
2025-09-23 |
|
| 12396155 |
Backend memory with air gaps in upper metal layers |
Abhishek A. Sharma, Albert Chen, Wilfred Gomes, Travis W. Lajoie, Van H. Le +3 more |
2025-08-19 |
|
| 12310001 |
Decoupling capacitors and methods of fabrication |
Juan G. Alzate-Vinasco, Travis W. Lajoie, Wilfred Gomes, Pulkit Jain, James Waldemer +4 more |
2025-05-20 |
|
| 12238913 |
Two transistor memory cell using stacked thin-film transistors |
Abhishek A. Sharma, Juan G. Alzate-Vinasco, Bernhard Sell, Pei-Hua Wang, Van H. Le +5 more |
2025-02-25 |
|
| 11991873 |
Capacitor separations in dielectric layers |
Travis W. Lajoie, Abhishek A. Sharma, Van H. Le, Chieh-Jen Ku, Pei-Hua Wang +13 more |
2024-05-21 |
$18,840,000 |
| 11832438 |
Capacitor connections in dielectric layers |
Travis W. Lajoie, Abhishek A. Sharma, Van H. Le, Chieh-Jen Ku, Pei-Hua Wang +13 more |
2023-11-28 |
$31,872,000 |
| 11690212 |
Memory architecture at back-end-of-line |
Umut Arslan, Juan G. Alzate Vinasco |
2023-06-27 |
$18,721,000 |
| 11652047 |
Intermediate separation layers at the back-end-of-line |
Travis W. Lajoie, Abhishek A. Sharma, Van H. Le, Chieh-Jen Ku, Pei-Hua Wang +13 more |
2023-05-16 |
$11,130,000 |
| 11610894 |
Capacitor separations in dielectric layers |
Travis W. Lajoie, Abhishek A. Sharma, Van H. Le, Chieh-Jen Ku, Pei-Hua Wang +13 more |
2023-03-21 |
$20,076,000 |
| 11462541 |
Memory cells based on vertical thin-film transistors |
Juan G. Alzate Vinasco, Abhishek A. Sharma, Bernhard Sell, Pei-Hua Wang, Van H. Le +5 more |
2022-10-04 |
$13,460,000 |
| 11450669 |
Stacked thin-film transistor based embedded dynamic random-access memory |
Abhishek A. Sharma, Juan G. Alzate-Vinasco, Bernhard Sell, Pei-Hua Wang, Van H. Le +5 more |
2022-09-20 |
$15,654,000 |
| 11094358 |
Semiconductor chip manufacturing process for integrating logic circuitry, embedded DRAM and embedded non-volatile ferroelectric random access memory (FERAM) on a same semiconductor die |
Ilya V. Karpov, Yih Wang, James S. Clarke |
2021-08-17 |
$29,127,000 |
| 11024356 |
Apparatus for low power write and read operations for resistive memory |
Liqiong Wei, Yih Wang, Nathaniel J. August, Blake C. Lin, Cyrille Dray |
2021-06-01 |
$35,542,000 |
| 10515697 |
Apparatuses and methods to control operations performed on resistive memory cells |
Pulkit Jain, Umut Arslan |
2019-12-24 |
$26,956,000 |
| 10438640 |
Apparatus for low power write and read operations for resistive memory |
Liqiong Wei, Yih Wang, Nathaniel J. August, Blake C. Lin, Cyrille Dray |
2019-10-08 |
$19,521,000 |
| 10068628 |
Apparatus for low power write and read operations for resistive memory |
Liqiong Wei, Yih Wang, Nathaniel J. August, Blake C. Lin, Cyrille Dray |
2018-09-04 |
$19,235,000 |
| 9978447 |
Memory cell with improved write margin |
Yih Wang, Muhammad M. Khellah |
2018-05-22 |
$37,728,000 |
| 9922691 |
Resistive memory write circuitry with bit line drive strength based on storage cell line resistance |
Pulkit Jain, Liqiong Wei |
2018-03-20 |
$13,809,000 |
| 9865322 |
Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory |
Cyrille Dray, Blake C. Lin, Liqiong Wei, Yih Wang |
2018-01-09 |
$14,051,000 |
| 9805790 |
Memory cell with retention using resistive memory |
Nathaniel J. August, Pulkit Jain, Stefan Rusu, Rangharajan Venkatesan, Muhammad M. Khellah +4 more |
2017-10-31 |
$13,240,000 |
| 9666268 |
Apparatus for adjusting supply level to improve write margin of a memory cell |
Yih Wang, Muhammad M. Khellah |
2017-05-30 |
$12,187,000 |
| 9478273 |
Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory |
Cyrille Dray, Blake C. Lin, Liqiong Wei, Yih Wang |
2016-10-25 |
$11,658,000 |
| 9455011 |
Methods and systems to read a magnetic tunnel junction (MTJ) based memory cell based on a pulsed read current |
Arijit Raychowdhury, David L. Kencke, Brian S. Doyle, Charles C. Kuo, James W. Tschanz +2 more |
2016-09-27 |
$16,083,000 |
| 9330747 |
Non-volatile latch using spin-transfer torque memory device |
Yih Wang |
2016-05-03 |
$11,131,000 |
| 9286976 |
Apparatuses and methods for detecting write completion for resistive memory |
Blake C. Lin, Cyrille Dray, Ananda Roy, Liqiong Wei |
2016-03-15 |
$12,478,000 |
