| 12021141 |
Multi-threshold voltage devices and associated techniques and configurations |
Joseph M. Steigerwald, Tahir Ghani, Jenny Hu |
2024-06-25 |
$773,000 |
| 11437511 |
Multi-threshold voltage devices and associated techniques and configurations |
Joseph M. Steigerwald, Tahir Ghani, Jenny Hu |
2022-09-06 |
$532,000 |
| 10573747 |
Multi-threshold voltage devices and associated techniques and configurations |
Joseph M. Steigerwald, Tahir Ghani, Jenny Hu |
2020-02-25 |
$18,813,000 |
| 9761713 |
Multi-threshold voltage devices and associated techniques and configurations |
Joseph M. Steigerwald, Tahir Ghani, Jenny Hu |
2017-09-12 |
$10,213,000 |
| 9219155 |
Multi-threshold voltage devices and associated techniques and configurations |
Joseph M. Steigerwald, Tahir Ghani, Jenny Hu |
2015-12-22 |
$19,949,000 |
| 8741720 |
Penetrating implant for forming a semiconductor device |
Giuseppe Curello, Nick Lindert, Walid M. Hafez, Chia-Hong Jan, Mark Bohr |
2014-06-03 |
$12,928,000 |
| 8426927 |
Penetrating implant for forming a semiconductor device |
Giuseppe Curello, Nick Lindert, Walid M. Hafez, Chia-Hong Jan, Mark Bohr |
2013-04-23 |
$13,399,000 |
| 8174060 |
Selective spacer formation on transistors of different classes on the same device |
Giuseppe Curello, Chia-Hong Jan, Mark Bohr |
2012-05-08 |
$29,842,000 |
| 8154067 |
Selective spacer formation on transistors of different classes on the same device |
Giuseppe Curello, Chia-Hong Jan, Mark Bohr |
2012-04-10 |
$33,757,000 |
| 7943468 |
Penetrating implant for forming a semiconductor device |
Giuseppe Curello, Nick Lindert, Walid M. Hafez, Chia-Hong Jan, Mark Bohr |
2011-05-17 |
$24,931,000 |
| 7560780 |
Active region spacer for semiconductor devices and method to form the same |
Giuseppe Curello, Chia-Hong Jan, Sunit Tyagi, Mark Bohr |
2009-07-14 |
$21,399,000 |
| 7541239 |
Selective spacer formation on transistors of different classes on the same device |
Giuseppe Curello, Chia-Hong Jan, Mark Bohr |
2009-06-02 |
$16,449,000 |
| 7226843 |
Indium-boron dual halo MOSFET |
Cory E. Weber, Gerhard Schrom, Mark Stettler |
2007-06-05 |
$17,840,000 |
| 6979609 |
Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks |
Kaizad Mistry |
2005-12-27 |
$17,238,000 |
| 6803285 |
Method of fabricating dual threshold voltage n-channel and p-channel mosfets with a single extra masked implant operation |
Kaizad Mistry |
2004-10-12 |
$44,708,000 |
| 6717221 |
Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks |
Kaizad Mistry |
2004-04-06 |
$23,009,000 |
| 6693331 |
Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operation |
Kaizad Mistry |
2004-02-17 |
$33,660,000 |
| 6627506 |
Thin tensile layers in shallow trench isolation and method of making same |
Kelin J. Kuhn |
2003-09-30 |
$25,999,000 |
| 6586294 |
Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks |
Kaizad Mistry |
2003-07-01 |
$52,453,000 |
| 6368931 |
Thin tensile layers in shallow trench isolation and method of making same |
Kelin J. Kuhn |
2002-04-09 |
$80,316,000 |
| 5670394 |
Method of making bipolar transistor having amorphous silicon contact as emitter diffusion source |
Rick C. Jerome |
1997-09-23 |
$16,948,000 |
| 5565370 |
Method of enhancing the current gain of bipolar junction transistors |
Rick C. Jerome, Gary M. Wodek |
1996-10-15 |
$5,699,000 |
| 5561073 |
Method of fabricating an isolation trench for analog bipolar devices in harsh environments |
Rick C. Jerome |
1996-10-01 |
|
| 5420050 |
Method of enhancing the current gain of bipolar junction transistors |
Rick C. Jerome, Gary M. Wodek |
1995-05-30 |
$3,905,000 |
