| 10332871 |
Area-efficient and robust electrostatic discharge circuit |
Christian Russ, Tomasz Biedrzycki, Franz Kuttner, Luis-Felipe Giles, Bernhard Stein |
2019-06-25 |
|
| 8741720 |
Penetrating implant for forming a semiconductor device |
Ian R. Post, Nick Lindert, Walid M. Hafez, Chia-Hong Jan, Mark Bohr |
2014-06-03 |
$12,928,000 |
| 8426927 |
Penetrating implant for forming a semiconductor device |
Ian R. Post, Nick Lindert, Walid M. Hafez, Chia-Hong Jan, Mark Bohr |
2013-04-23 |
$13,399,000 |
| 8174060 |
Selective spacer formation on transistors of different classes on the same device |
Ian R. Post, Chia-Hong Jan, Mark Bohr |
2012-05-08 |
$29,842,000 |
| 8154067 |
Selective spacer formation on transistors of different classes on the same device |
Ian R. Post, Chia-Hong Jan, Mark Bohr |
2012-04-10 |
$33,757,000 |
| 7943468 |
Penetrating implant for forming a semiconductor device |
Ian R. Post, Nick Lindert, Walid M. Hafez, Chia-Hong Jan, Mark Bohr |
2011-05-17 |
$24,931,000 |
| 7560780 |
Active region spacer for semiconductor devices and method to form the same |
Ian R. Post, Chia-Hong Jan, Sunit Tyagi, Mark Bohr |
2009-07-14 |
$21,399,000 |
| 7541239 |
Selective spacer formation on transistors of different classes on the same device |
Ian R. Post, Chia-Hong Jan, Mark Bohr |
2009-06-02 |
$16,449,000 |
| 7482670 |
Enhancing strained device performance by use of multi narrow section layout |
Thomas Hoffmann, Mark Armstrong |
2009-01-27 |
$21,790,000 |
| 7422950 |
Strained silicon MOS device with box layer between the source and drain regions |
Hemant Deshpande, Sunit Tyagi, Mark Bohr |
2008-09-09 |
$18,766,000 |
| 7335959 |
Device with stepped source/drain region profile |
Bernhard Sell, Sunit Tyagi, Chris Auth |
2008-02-26 |
$16,748,000 |
| 7129533 |
High concentration indium fluorine retrograde wells |
Cory E. Weber, Mark Armstrong, Stephen M. Cea, Sing-Chung Hu, Aaron D. Lilak +1 more |
2006-10-31 |
$18,482,000 |
| 7101765 |
Enhancing strained device performance by use of multi narrow section layout |
Thomas Hoffmann, Mark Armstrong |
2006-09-05 |
$13,820,000 |
| 7078325 |
Process for producing a doped semiconductor substrate |
Jurgen Faul |
2006-07-18 |
$183,000 |
| 6838329 |
High concentration indium fluorine retrograde wells |
Cory E. Weber, Mark Armstrong, Stephen M. Cea, Sing-Chung Hu, Aaron D. Lilak +1 more |
2005-01-04 |
$23,080,000 |
| 6503844 |
Notched gate configuration for high performance integrated circuits |
— |
2003-01-07 |
$107,000 |
