Issued Patents All Time
Showing 25 most recent of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426316 | Method of fabricating integrated circuits with fin trim plug structures having an oxidation catalyst layer surrounded by a recessed dielectric material | Leonard P. GULER, Biswajeet Guha, Swaminathan Sivakumar, Tahir Ghani | 2025-09-23 |
| 11688792 | Dual self-aligned gate endcap (SAGE) architectures | Sairam Subramanian, Walid M. Hafez, Sridhar Govindaraju, Mark Liu, Szuya S. Liao +2 more | 2023-06-27 |
| 11605632 | Unidirectional self-aligned gate endcap (SAGE) architectures with gate-orthogonal walls | Walid M. Hafez, Sridhar Govindaraju, Mark Liu, Szuya S. Liao, Chia-Hong Jan +2 more | 2023-03-14 |
| 11562999 | Cost effective precision resistor using blocked DEPOP method in self-aligned gate endcap (SAGE) architecture | Roman W. Olac-Vaw, Chia-Hong Jan, Walid M. Hafez | 2023-01-24 |
| 11538937 | Fin trim plug structures having an oxidation catalyst layer surrounded by a recessed dielectric material | Leonard P. GULER, Biswajeet Guha, Swaminathan Sivakumar, Tahir Ghani | 2022-12-27 |
| 11217582 | Unidirectional self-aligned gate endcap (SAGE) architectures with gate-orthogonal walls | Walid M. Hafez, Sridhar Govindaraju, Mark Liu, Szuya S. Liao, Chia-Hong Jan +2 more | 2022-01-04 |
| 11205708 | Dual self-aligned gate endcap (SAGE) architectures | Sairam Subramanian, Walid M. Hafez, Sridhar Govindaraju, Mark Liu, Szuya S. Liao +2 more | 2021-12-21 |
| 10541143 | Self-aligned build-up of topographic features | Leonard P. GULER | 2020-01-21 |
| 10109628 | Transistor device with gate control layer undercutting the gate dielectric | Anand S. Murthy, Glenn A. Glass | 2018-10-23 |
| 9972541 | Technique for filling high aspect ratio, narrow structures with multiple metal layers and associated configurations | Joseph M. Steigerwald | 2018-05-15 |
| 9691839 | Metal-insulator-metal (MIM) capacitor with insulator stack having a plurality of metal oxide layers | Timothy E. Glassman, Andre Baran | 2017-06-27 |
| 9577030 | Semiconductor structure having a capacitor and metal wiring integrated in a same dielectric layer | — | 2017-02-21 |
| 9565766 | Formation of DRAM capacitor among metal interconnect | Joseph M. Steigerwald, Kanwal Jit Singh | 2017-02-07 |
| 9224794 | Embedded memory device having MIM capacitor formed in excavated structure | Steven J. Keating, Nadia M. Rahhal-Orabi, Brian S. Doyle, Satyarth Suri, Swaminathan Sivakumar +2 more | 2015-12-29 |
| 9076758 | Rectangular capacitors for dynamic random access (DRAM) and dual-pass lithography methods to form the same | — | 2015-07-07 |
| 8741720 | Penetrating implant for forming a semiconductor device | Giuseppe Curello, Ian R. Post, Walid M. Hafez, Chia-Hong Jan, Mark Bohr | 2014-06-03 |
| 8519462 | 6F2 DRAM cell | Yih Wang, M. Clair Webb, Swaminathan Sivakumar, Kevin X. Zhang, Dinesh Somasekhar | 2013-08-27 |
| 8502293 | Capacitor with recessed plate portion for dynamic random access memory (DRAM) and method to form the same | — | 2013-08-06 |
| 8441057 | Embedded memory device having MIM capacitor formed in excavated structure | Steven J. Keating, Nadia M. Rahhal-Orabi, Brian S. Doyle, Satyarth Suri, Swaminathan Sivakumar +2 more | 2013-05-14 |
| 8441097 | Methods to form memory devices having a capacitor with a recessed electrode | Joseph M. Steigerwald, Steven J. Keating, Christopher J. Jezewski, Timothy E. Glassman | 2013-05-14 |
| 8426927 | Penetrating implant for forming a semiconductor device | Giuseppe Curello, Ian R. Post, Walid M. Hafez, Chia-Hong Jan, Mark Bohr | 2013-04-23 |
| 8344452 | Metal gate transistors with raised source and drain regions formed on heavily doped substrate | Justin K. Brask, Andrew N. Westmeyer | 2013-01-01 |
| 8030197 | Recessed channel array transistor (RCAT) in replacement metal gate (RMG) logic flow | Brian S. Doyle, Gilbert Dewey, Ravi Pillarisetty, Uday Shah, Dinesh Somasekhar | 2011-10-04 |
| 7981756 | Common plate capacitor array connections, and processes of making same | Brian S. Doyle, Dinesh Somasekhar, Christopher J. Jezewski, Swaminathan Sivakumar, Kevin X. Zhang +1 more | 2011-07-19 |
| 7951673 | Forming abrupt source drain metal gate transistors | Suman Datta, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Justin K. Brask +3 more | 2011-05-31 |