Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods to form memory devices having a capacitor with a recessed electrode

Methods to form memory devices having a capacitor with a recessed electrode

US Patent 8441097 · Granted May 14, 2013

Estimated economic value: $17,697,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Subtractively patterned interconnect structures for integrated circuits2025
Method of fabricating integrated circuits with fin trim plug structures having a2025
Wrap-around trench contact structure and methods of fabrication2025
Integrated circuit interconnect structures with graphene cap2025
Cobalt based interconnects and methods of fabrication thereof2025
Low resistance and reduced reactivity approaches for fabricating contacts and th2025
Method of forming high density, high shorting margin, and low capacitance interc2025
Conformal low temperature hermetic dielectric diffusion barriers2025
Self-aligned contacts2025
Metallization stacks with self-aligned staggered metal lines2025
Integrated circuits and methods for forming thin film crystal layers2025
Dual contact process with stacked metal layers2024