Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dual contact process with stacked metal layers

Dual contact process with stacked metal layers

US Patent 12170319 · Granted Dec 17, 2024

Estimated economic value: $33,648,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Package architecture of photonic system with vertically stacked dies having plan2025
Capacitor with dual dielectric layers2025
Subtractively patterned interconnect structures for integrated circuits2025
Gate-all-around integrated circuit structures having underlying dopant-diffusion2025
Source or drain structures with relatively high germanium content2025
Integrated circuit devices with angled transistors formed based on angled wafers2025
Integrated circuit structures having ultra-high conductivity global routing2025
Conductive contacts wrapped around epitaxial source or drain regions2025
Staircase-based metal-insulator-metal (MIM) capacitors2025
Capacitor with an electrically conductive layer coupled with a metal layer of th2025
Reduced contact resistivity with PMOS germanium and silicon doped with boron gat2025
Co-deposition of titanium and silicon for improved silicon germanium source and 2025