| 9224794 |
Embedded memory device having MIM capacitor formed in excavated structure |
Nick Lindert, Nadia M. Rahhal-Orabi, Brian S. Doyle, Satyarth Suri, Swaminathan Sivakumar +2 more |
2015-12-29 |
$8,962,000 |
| 8441057 |
Embedded memory device having MIM capacitor formed in excavated structure |
Nick Lindert, Nadia M. Rahhal-Orabi, Brian S. Doyle, Satyarth Suri, Swaminathan Sivakumar +2 more |
2013-05-14 |
$17,697,000 |
| 8441097 |
Methods to form memory devices having a capacitor with a recessed electrode |
Joseph M. Steigerwald, Nick Lindert, Christopher J. Jezewski, Timothy E. Glassman |
2013-05-14 |
$17,697,000 |
| 7927959 |
Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby |
Nick Lindert, Nadia M. Rahhal-Orabi, Brian S. Doyle, Satyarth Suri, Swaminathan Sivakumar +2 more |
2011-04-19 |
$14,493,000 |
| 7821044 |
Transistor with improved tip profile and method of manufacture thereof |
Mark Bohr, Thomas A. Letson, Anand S. Murthy, Donald W. O'Neill, Willy Rachmady |
2010-10-26 |
$15,337,000 |
| 7799139 |
Chemistry for removal of photo resist, organic sacrificial fill material and etch polymer |
— |
2010-09-21 |
$10,255,000 |
| 7494858 |
Transistor with improved tip profile and method of manufacture thereof |
Mark Bohr, Thomas A. Letson, Anand S. Murthy, Donald W. O'Neill, Willy Rachmady |
2009-02-24 |
$15,365,000 |
| 7316949 |
Integrating n-type and p-type metal gate transistors |
Mark L. Doczy, Justin K. Brask, Chris Barns, Brian S. Doyle, Michael L. McSwiney +2 more |
2008-01-08 |
$13,798,000 |
| 7211872 |
Device having recessed spacers for improved salicide resistance on polysilicon gates |
Chia-Hong Jan, Julie Tsai, Simon Shi-Ning Yang, Tahir Ghani, Kevin A. Whitehill +1 more |
2007-05-01 |
$14,206,000 |
| 7045407 |
Amorphous etch stop for the anisotropic etching of substrates |
Chris Auth |
2006-05-16 |
$12,044,000 |
| 6972225 |
integrating n-type and P-type metal gate transistors |
Mark L. Doczy, Justin K. Brask, Chris Barns, Brian S. Doyle, Michael L. McSwiney +2 more |
2005-12-06 |
$17,814,000 |
| 6953719 |
Integrating n-type and p-type metal gate transistors |
Mark L. Doczy, Justin K. Brask, Chris Barns, Brian S. Doyle, Michael L. McSwiney +2 more |
2005-10-11 |
$27,235,000 |
| 6858483 |
Integrating n-type and p-type metal gate transistors |
Mark L. Doczy, Justin K. Brask, Chris Barns, Brian S. Doyle, Michael L. McSwiney +2 more |
2005-02-22 |
$35,388,000 |
| 6797622 |
Selective etching of polysilicon |
Justin K. Brask, Mark L. Doczy, Travis J. Delashmutt |
2004-09-28 |
$27,830,000 |
| 6777760 |
Device with recessed thin and thick spacers for improved salicide resistance on polysilicon gates |
Chia-Hong Jan, Julie Tsai, Simon Shi-Ning Yang, Tahir Ghani, Kevin A. Whitehill +1 more |
2004-08-17 |
$19,443,000 |
| 6703291 |
Selective NiGe wet etch for transistors with Ge body and/or Ge source/drain extensions |
Boyan Boyanov, Anand S. Murthy |
2004-03-09 |
$36,606,000 |
| 6667232 |
Thin dielectric layers and non-thermal formation thereof |
Robert S. Chau, Reza Arghavani, Jack T. Kavalieros, Douglas Barlage |
2003-12-23 |
$55,491,000 |
| 6593633 |
Method and device for improved salicide resistance on polysilicon gates |
Chia-Hong Jan, Julie Tsai, Simon Shi-Ning Yang, Tahir Ghani, Kevin A. Whitehill +1 more |
2003-07-15 |
$37,859,000 |
| 6521964 |
Device having spacers for improved salicide resistance on polysilicon gates |
Chia-Hong Jan, Julie Tsai, Simon Shi-Ning Yang, Tahir Ghani, Kevin A. Whitehill +1 more |
2003-02-18 |
$52,625,000 |
| 6509618 |
Device having thin first spacers and partially recessed thick second spacers for improved salicide resistance on polysilicon gates |
Chia-Hong Jan, Julie Tsai, Simon Shi-Ning Yang, Tahir Ghani, Kevin A. Whitehill +1 more |
2003-01-21 |
$41,003,000 |
| 6506652 |
Method of recessing spacers to improved salicide resistance on polysilicon gates |
Chia-Hong Jan, Julie Tsai, Simon Shi-Ning Yang, Tahir Ghani, Kevin A. Whitehill +1 more |
2003-01-14 |
$60,878,000 |
| 6271096 |
Method and device for improved salicide resistance on polysilicon gates |
Chia-Hong Jan, Julie Tsai, Simon Shi-Ning Yang, Tahir Ghani, Kevin A. Whitehill +1 more |
2001-08-07 |
$139,051,000 |
| 6268254 |
Method and device for improved salicide resistance on polysilicon gates |
Chia-Hong Jan, Julie Tsai, Simon Shi-Ning Yang, Tahir Ghani, Kevin A. Whitehill +1 more |
2001-07-31 |
$265,780,000 |
| 6251762 |
Method and device for improved salicide resistance on polysilicon gates |
Chia-Hong Jan, Julie Tsai, Simon Shi-Ning Yang, Tahir Ghani, Kevin A. Whitehill +1 more |
2001-06-26 |
$197,004,000 |
| 6235598 |
Method of using thick first spacers to improve salicide resistance on polysilicon gates |
Chia-Hong Jan, Julie Tsai, Simon Shi-Ning Yang, Tahir Ghani, Kevin A. Whitehill +1 more |
2001-05-22 |
$176,958,000 |
