Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrating n-type and p-type metal gate transistors

Integrating n-type and p-type metal gate transistors

US Patent 6858483 · Granted Feb 22, 2005

Estimated economic value: $35,388,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanowire transistor fabrication with hardmask layers2025
Non-contact optical measurement devices and exchangeable optical probes2025
Gate-all-around integrated circuit structures having germanium-diffused nanoribb2025
Compositional engineering of Schottky diode2025
Transistor gate trench engineering to decrease capacitance and resistance2025
Capacitor connections in dielectric layers2025
Formation of gate spacers for strained PMOS gate-all-around transistor structure2025
Integrated circuit devices with FinFETs over gate-all-around transistors2025
Integrated circuit assemblies with stacked compute logic and memory dies2025
Field effect transistors with a gated oxide semiconductor source/drain spacer2025
Transistor structures with a metal oxide contact buffer and a method of fabricat2025
Asymmetric gate structures and contacts for stacked transistors2025