| 12492891 |
Non-contact optical measurement devices and exchangeable optical probes |
Shawn Boling, Bhisksha Raj Ramakrishnan, Derek Aqui |
2025-12-09 |
|
| 12146736 |
Metrology system |
Derek Aqui, Mark Baker, Robert Batten, Shawn Boling, Jared Greco +2 more |
2024-11-19 |
|
| 11486689 |
Metrology system |
Derek Aqui, Mark Baker, Robert Batten, Shawn Boling, Jared Greco +2 more |
2022-11-01 |
|
| 10598521 |
Metrology system |
Derek Aqui, Mark Baker, Robert Batten, Shawn Boling, Jared Greco +2 more |
2020-03-24 |
|
| 8148786 |
Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate |
Jack T. Kavalieros, Annalisa Cappellani, Justin K. Brask, Mark L. Doczy, Matthew V. Metz +2 more |
2012-04-03 |
$17,954,000 |
| 7883951 |
CMOS device with metal and silicide gate electrodes and a method for making it |
Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Matthew V. Metz, Uday Shah +3 more |
2011-02-08 |
$12,723,000 |
| 7754552 |
Preventing silicide formation at the gate electrode in a replacement metal gate technology |
Justin K. Brask, Mark L. Doczy |
2010-07-13 |
$17,820,000 |
| 7671471 |
Method for making a semiconductor device having a high-k dielectric layer and a metal gate electrode |
Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Uday Shah, Matthew V. Metz +3 more |
2010-03-02 |
$14,883,000 |
| 7666465 |
Introducing nanotubes in trenches and structures formed thereby |
Paul B. Fischer, Anne Miller, Kenneth Cadien |
2010-02-23 |
$16,403,000 |
| 7569443 |
Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate |
Jack T. Kavalieros, Annalisa Cappellani, Justin K. Brask, Mark L. Doczy, Matthew V. Metz +2 more |
2009-08-04 |
$15,097,000 |
| 7422936 |
Facilitating removal of sacrificial layers via implantation to form replacement metal gates |
Matt Prince, Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros |
2008-09-09 |
$18,766,000 |
| 7355281 |
Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrode |
Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Uday Shah, Matthew V. Metz +3 more |
2008-04-08 |
$22,423,000 |
| 7316949 |
Integrating n-type and p-type metal gate transistors |
Mark L. Doczy, Justin K. Brask, Steven J. Keating, Brian S. Doyle, Michael L. McSwiney +2 more |
2008-01-08 |
$13,798,000 |
| 7294931 |
Method and apparatus for selective deposition |
— |
2007-11-13 |
$26,433,000 |
| 7271045 |
Etch stop and hard mask film property matching to enable improved replacement metal gate process |
Matthew J. Prince, Justin K. Brask |
2007-09-18 |
$14,997,000 |
| 7239019 |
Selectively converted inter-layer dielectric |
Jihperng Leu, Grant Kloster, David H. Gracias, Lee Rockford, Peter K. Moon |
2007-07-03 |
$20,127,000 |
| 7238610 |
Method and apparatus for selective deposition |
— |
2007-07-03 |
$20,127,000 |
| 7220635 |
Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layer |
Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Uday Shah, Matthew V. Metz +3 more |
2007-05-22 |
$18,006,000 |
| 7217611 |
Methods for integrating replacement metal gate structures |
Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Scott A. Hareland, Matthew V. Metz +1 more |
2007-05-15 |
$17,522,000 |
| 7208361 |
Replacement gate process for making a semiconductor device that includes a metal gate electrode |
Uday Shah, Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Matthew V. Metz +1 more |
2007-04-24 |
$13,574,000 |
| 7205236 |
Semiconductor substrate polishing methods and equipment |
Paul B. Fischer |
2007-04-17 |
$18,299,000 |
| 7183184 |
Method for making a semiconductor device that includes a metal gate electrode |
Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Uday Shah, Robert S. Chau |
2007-02-27 |
$10,067,000 |
| 7166506 |
Poly open polish process |
Matthew J. Prince, Francis M. Tambwe |
2007-01-23 |
$17,655,000 |
| 7157378 |
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode |
Justin K. Brask, Mark L. Doczy, Uday Shah, Jack T. Kavalieros, Matthew V. Metz +3 more |
2007-01-02 |
|
| 7153784 |
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode |
Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Uday Shah, Matthew V. Metz +3 more |
2006-12-26 |
$11,208,000 |
