JL

Jihperng Leu

IN Intel: 28 patents #1,356 of 30,777Top 5%
NU National Chiao Tung University: 1 patents #506 of 1,517Top 35%
Overall (All Time): #132,119 of 4,157,543Top 4%
29
Patents All Time

Issued Patents All Time

Showing 25 most recent of 29 patents

Patent #TitleCo-InventorsDate
8963421 Electroluminescent device including moisture barrier layer Shu-Hao Syu, Hung-En Tu, Chih-Chieh Wang 2015-02-24
8299617 Method and apparatus for forming metal-metal oxide etch stop/barrier for integrated circuit interconnects Xiaorong Morrow, Markus Kuhn, Jose Maiz 2012-10-30
7727892 Method and apparatus for forming metal-metal oxide etch stop/barrier for integrated circuit interconnects Xiaorong Morrow, Markus Kuhn, Jose Maiz 2010-06-01
7466025 Formation of interconnect structures by removing sacrificial material with supercritical carbon dioxide Michael Goodner 2008-12-16
7348283 Mechanically robust dielectric film and stack Jun He 2008-03-25
7339271 Metal-metal oxide etch stop/barrier for integrated circuit interconnects Xiaorong Morrow, Markus Kuhn, Jose Maiz 2008-03-04
7320935 Semiconductor device using an interconnect Christopher D. Thomas 2008-01-22
7294934 Low-K dielectric structure and method Grant Kloster, Xiarong Morrow 2007-11-13
7239019 Selectively converted inter-layer dielectric Grant Kloster, David H. Gracias, Lee Rockford, Peter K. Moon, Chris Barns 2007-07-03
7214594 Method of making semiconductor device using a novel interconnect cladding layer Lawrence Wong, Grant Kloster, Andrew Ott, Patrick Morrow 2007-05-08
7175970 Mechanically robust interconnect for low-k dielectric material using post treatment Jun He 2007-02-13
7164206 Structure in a microelectronic device including a bi-layer for a diffusion barrier and an etch-stop layer Grant Kloster, Lawrence Wong, Andrew Ott, Patrick Marrow 2007-01-16
7145245 Low-k dielectric film with good mechanical strength that varies in local porosity depending on location on substrate—therein Grant Kloster, Lee Rockford 2006-12-05
7018918 Method of forming a selectively converted inter-layer dielectric using a porogen material Grant Kloster, Kevin P. O'Brien, Michael Goodner, David H. Gracias, Lee Rockford +2 more 2006-03-28
6998216 Mechanically robust interconnect for low-k dielectric material using post treatment Jun He 2006-02-14
6992391 Dual-damascene interconnects without an etch stop layer by alternating ILDs Andrew Ott, Lawrence Wong, Patrick Morrow, Grant Kloster 2006-01-31
6964919 Low-k dielectric film with good mechanical strength Grant Kloster, Lee Rockford 2005-11-15
6943121 Selectively converted inter-layer dielectric Grant Kloster, David H. Gracias, Lee Rockford, Peter K. Moon, Chris Barns 2005-09-13
6924222 Formation of interconnect structures by removing sacrificial material with supercritical carbon dioxide Michael Goodner 2005-08-02
6903461 Semiconductor device having a region of a material which is vaporized upon exposing to ultraviolet radiation Grant Kloster, Hyun-Mog Park 2005-06-07
6867125 Creating air gap in multi-level metal interconnects using electron beam to remove sacrificial material Grant Kloster, Hyun-Mog Park 2005-03-15
6846755 Bonding a metal component to a low-k dielectric material Grant Kloster 2005-01-25
6794755 Surface alteration of metal interconnect in integrated circuits for electromigration and adhesion improvement Jose Maiz, Xiaorong Morrow, Thomas Marieb, Carolyn Block, Paul McGregor +2 more 2004-09-21
6743712 Method of making a semiconductor device by forming a masking layer with a tapered etch profile Hyun-Mog Park, Chih-I Wu 2004-06-01
6734118 Dielectric material treatment Grant Kloster, David Staines 2004-05-11