| 7567379 |
Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system |
Robert L. Bristol, Bryan Rice, Ming Fang, Melissa Shell |
2009-07-28 |
$29,156,000 |
| 7316949 |
Integrating n-type and p-type metal gate transistors |
Mark L. Doczy, Justin K. Brask, Steven J. Keating, Chris Barns, Brian S. Doyle +2 more |
2008-01-08 |
$13,798,000 |
| 7122870 |
Methods of forming a multilayer stack alloy for work function engineering |
Collin Borla, Mark L. Doczy, Markus Kuhn, Jacob Jensen |
2006-10-17 |
$12,433,000 |
| 7087521 |
Forming an intermediate layer in interconnect joints and structures formed thereby |
Mukul Renavikar |
2006-08-08 |
$12,359,000 |
| 7064446 |
Under bump metallization layer to enable use of high tin content solder bumps |
Gerald Feldewerth, Ming Fang, Kevin J. Lee, Tzuen-Luh Huang, Harry Liang +3 more |
2006-06-20 |
$13,743,000 |
| 7022559 |
MOSFET gate electrodes having performance tuned work functions and methods of making same |
Robert S. Chau, Chunlin Liang |
2006-04-04 |
$11,898,000 |
| 6972225 |
integrating n-type and P-type metal gate transistors |
Mark L. Doczy, Justin K. Brask, Steven J. Keating, Chris Barns, Brian S. Doyle +2 more |
2005-12-06 |
$17,814,000 |
| 6953719 |
Integrating n-type and p-type metal gate transistors |
Mark L. Doczy, Justin K. Brask, Steven J. Keating, Chris Barns, Brian S. Doyle +2 more |
2005-10-11 |
$27,235,000 |
| 6939815 |
Method for making a semiconductor device having a high-k gate dielectric |
Justin K. Brask, Mark L. Doczy, Scott A. Hareland, Matthew V. Metz, Jack T. Kavalieros +1 more |
2005-09-06 |
$17,626,000 |
| 6897134 |
Method for making a semiconductor device having a high-k gate dielectric |
Justin K. Brask, Mark L. Doczy, Robert S. Chau |
2005-05-24 |
$30,688,000 |
| 6867102 |
Method for making a semiconductor device having a high-k gate dielectric |
Justin K. Brask, Mark L. Doczy, Ying Zhou |
2005-03-15 |
$27,410,000 |
| 6858483 |
Integrating n-type and p-type metal gate transistors |
Mark L. Doczy, Justin K. Brask, Steven J. Keating, Chris Barns, Brian S. Doyle +2 more |
2005-02-22 |
$35,388,000 |
| 6855639 |
Precise patterning of high-K films |
Justin K. Brask, Mark L. Doczy, Matthew V. Metz, Paul Markworth |
2005-02-15 |
$22,930,000 |
| 6849509 |
Methods of forming a multilayer stack alloy for work function engineering |
Collin Borla, Mark L. Doczy, Markus Kuhn, Jacob Jensen |
2005-02-01 |
$25,622,000 |
| 6806146 |
Method for making a semiconductor device having a high-k gate dielectric |
Justin K. Brask, Mark L. Doczy, Ying Zhou |
2004-10-19 |
$58,589,000 |
| 6709911 |
Method for making a semiconductor device having a high-k gate dielectric |
Mark L. Doczy, Justin K. Brask |
2004-03-23 |
$37,745,000 |
| 6696327 |
Method for making a semiconductor device having a high-k gate dielectric |
Justin K. Brask, Mark L. Doczy, Robert S. Chau |
2004-02-24 |
$44,165,000 |
