| 7223992 |
Thermal conducting trench in a semiconductor structure |
Brian S. Doyle |
2007-05-29 |
$13,871,000 |
| 7187044 |
Complementary metal gate electrode technology |
Gang Bai |
2007-03-06 |
$17,685,000 |
| 7067406 |
Thermal conducting trench in a semiconductor structure and method for forming the same |
Brian S. Doyle |
2006-06-27 |
$17,073,000 |
| 7045468 |
Isolated junction structure and method of manufacture |
— |
2006-05-16 |
$12,044,000 |
| 7022559 |
MOSFET gate electrodes having performance tuned work functions and methods of making same |
John Barnak, Robert S. Chau |
2006-04-04 |
$11,898,000 |
| 6998357 |
High dielectric constant metal oxide gate dielectrics |
Gang Bai, David B. Fraser, Brian S. Doyle, Peng Cheng |
2006-02-14 |
$11,997,000 |
| 6879009 |
Integrated circuit with MOSFETS having bi-layer metal gate electrodes |
Jun Zheng |
2005-04-12 |
$19,475,000 |
| 6794232 |
Method of making MOSFET gate electrodes with tuned work function |
Jun Zheng, Brian S. Doyle, Gang Bai |
2004-09-21 |
$17,403,000 |
| 6790731 |
Method for tuning a work function for MOSFET gate electrodes |
Jun Zheng, Brian S. Doyle, Gang Bai |
2004-09-14 |
$15,917,000 |
| 6743664 |
Flip-chip on flex for high performance packaging applications |
Larry E. Mosley, Chun Mu |
2004-06-01 |
$40,563,000 |
| 6696333 |
Method of making integrated circuit with MOSFETs having bi-layer metal gate electrodes |
Jun Zheng |
2004-02-24 |
$44,165,000 |
| 6689702 |
High dielectric constant metal oxide gate dielectrics |
Gang Bai, David B. Fraser, Brian S. Doyle, Peng Cheng |
2004-02-10 |
$45,568,000 |
| 6642557 |
Isolated junction structure for a MOSFET |
— |
2003-11-04 |
$42,713,000 |
| 6624045 |
Thermal conducting trench in a seminconductor structure and method for forming the same |
Brian S. Doyle |
2003-09-23 |
$27,638,000 |
| 6605845 |
Asymmetric MOSFET using spacer gate technique |
— |
2003-08-12 |
$56,289,000 |
| 6600364 |
Active interposer technology for high performance CMOS packaging application |
Xiao-Chun Mu |
2003-07-29 |
$49,479,000 |
| 6528856 |
High dielectric constant metal oxide gate dielectrics |
Gang Bai, David B. Fraser, Brian S. Doyle, Peng Cheng |
2003-03-04 |
$41,105,000 |
| 6492217 |
Complementary metal gates and a process for implementation |
Gang Bai |
2002-12-10 |
$69,846,000 |
| 6461895 |
Process for making active interposer for high performance packaging applications |
Larry E. Mosley, Xiao-Chun Mu |
2002-10-08 |
$34,377,000 |
| 6373111 |
Work function tuning for MOSFET gate electrodes |
Jun Zheng, Brian S. Doyle, Gang Bai |
2002-04-16 |
$77,675,000 |
| 6365962 |
Flip-chip on flex for high performance packaging applications |
Larry E. Mosley, Xiao-Chun Mu |
2002-04-02 |
$46,572,000 |
| 6362078 |
Dynamic threshold voltage device and methods for fabricating dynamic threshold voltage devices |
Brian S. Doyle, Brian Roberds |
2002-03-26 |
$63,938,000 |
| 6265258 |
Method for making a complementary metal gate electrode technology |
Gang Bai |
2001-07-24 |
$166,417,000 |
| 6222254 |
Thermal conducting trench in a semiconductor structure and method for forming the same |
Brian S. Doyle |
2001-04-24 |
$172,753,000 |
| 6207541 |
Method employing silicon nitride spacers for making an integrated circuit device |
Siddhartha Das |
2001-03-27 |
$117,605,000 |
