Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method employing silicon nitride spacers for making an integrated circuit device

Method employing silicon nitride spacers for making an integrated circuit device

US Patent 6207541 · Granted Mar 27, 2001

Estimated economic value: $117,605,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for producing dried fruit powder2025
System and method for improving chatbot training dataset2024
System and method for providing automated data visualization and modification2022
Adsorption/desorption-based sensor for volatile organic compounds (VOCs)2022
Treatment of cancer with complex organic-inorganic pigment compositions2013
Thermal conducting trench in a semiconductor structure2007
Complementary metal gate electrode technology2007
Thermal conducting trench in a semiconductor structure and method for forming th2006
Isolated junction structure and method of manufacture2006
MOSFET gate electrodes having performance tuned work functions and methods of ma2006
High dielectric constant metal oxide gate dielectrics2006
Integrated circuit with MOSFETS having bi-layer metal gate electrodes2005