Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Isolated junction structure and method of manufacture

Isolated junction structure and method of manufacture

US Patent 7045468 · Granted May 16, 2006

Estimated economic value: $12,044,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thermal conducting trench in a semiconductor structure2007
Complementary metal gate electrode technology2007
Thermal conducting trench in a semiconductor structure and method for forming th2006
MOSFET gate electrodes having performance tuned work functions and methods of ma2006
High dielectric constant metal oxide gate dielectrics2006
Integrated circuit with MOSFETS having bi-layer metal gate electrodes2005
Method of making MOSFET gate electrodes with tuned work function2004
Method for tuning a work function for MOSFET gate electrodes2004
Flip-chip on flex for high performance packaging applications2004
Method of making integrated circuit with MOSFETs having bi-layer metal gate elec2004
High dielectric constant metal oxide gate dielectrics2004
Isolated junction structure for a MOSFET2003