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Home › Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby

Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby

US Patent 7927959 · Granted Apr 19, 2011

Estimated economic value: $14,493,000 ⓘ

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