Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8426858 | Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain | Michael L. Hattendorf, Jack Hwang, Anand S. Murthy | 2013-04-23 |
| 8344452 | Metal gate transistors with raised source and drain regions formed on heavily doped substrate | Nick Lindert, Justin K. Brask | 2013-01-01 |
| 7858981 | Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain | Michael L. Hattendorf, Jack Hwang, Anand S. Murthy | 2010-12-28 |
| 7812394 | CMOS transistor junction regions formed by a CVD etching and deposition sequence | Anand S. Murthy, Glenn A. Glass, Michael L. Hattendorf, Jeffrey R. Wank | 2010-10-12 |
| 7479432 | CMOS transistor junction regions formed by a CVD etching and deposition sequence | Anand S. Murthy, Glenn A. Glass, Michael L. Hattendorf, Jeffrey R. Wank | 2009-01-20 |
| 7479431 | Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain | Michael L. Hattendorf, Jack Hwang, Anand S. Murthy | 2009-01-20 |
| 7427775 | Fabricating strained channel epitaxial source/drain transistors | Anand S. Murthy, Justin K. Brask, Boyan Boyanov, Nick Lindert | 2008-09-23 |
| 7402872 | Method for forming an integrated circuit | Anand S. Murthy, Glenn A. Glass, Michael L. Hattendorf, Tahir Ghani | 2008-07-22 |
| 7332439 | Metal gate transistors with epitaxial source and drain regions | Nick Lindert, Justin K. Brask | 2008-02-19 |
| 7226842 | Fabricating strained channel epitaxial source/drain transistors | Anand S. Murthy, Justin K. Brask, Boyan Boyanov, Nick Lindert | 2007-06-05 |
| 7195985 | CMOS transistor junction regions formed by a CVD etching and deposition sequence | Anand S. Murthy, Glenn A. Glass, Michael L. Hattendorf, Jeffrey R. Wank | 2007-03-27 |