Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Selective spacer formation on transistors of different classes on the same device

Selective spacer formation on transistors of different classes on the same device

US Patent 8154067 · Granted Apr 10, 2012

Estimated economic value: $33,757,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High-voltage transistor with self-aligned isolation2025
Hyperchip2025
Adjacent gate-all-around integrated circuit structures having non-merged epitaxi2025
Semiconductor device having tipless epitaxial source/drain regions2025
Gate contact structure over active gate and method to fabricate same2025
Self-aligned contacts2025
Non-planar I/O and logic semiconductor devices having different workfunction on 2025
Uniform layouts for SRAM and register file bit cells2024
Gate-all-around integrated circuit structures having source or drain structures 2024
High voltage three-dimensional devices having dielectric liners2024
Deep trench via for three-dimensional integrated circuit2024
Hyperchip2024