Issued Patents All Time
Showing 126–150 of 340 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11152361 | Techniques for achieving multiple transistor fin dimensions on a single die | Glenn A. Glass | 2021-10-19 |
| 11121030 | Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch | Glenn A. Glass, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +1 more | 2021-09-14 |
| 11107920 | Methods of forming dislocation enhanced strain in NMOS structures | Michael Jackson, Glenn A. Glass, Saurabh Morarka, Chandra S. Mohapatra | 2021-08-31 |
| 11107890 | FINFET transistor having a doped subfin structure to reduce channel to substrate leakage | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Chandra S. Mohapatra, Tahir Ghani +2 more | 2021-08-31 |
| 11101356 | Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors | Glenn A. Glass, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2021-08-24 |
| 11101350 | Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements | Glenn A. Glass, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more | 2021-08-24 |
| 11101268 | Transistors employing non-selective deposition of source/drain material | Karthik Jambunathan, Scott Maddox, Ritesh Jhaveri, Pratik A. Patel, Szuya S. Liao +1 more | 2021-08-24 |
| 11094785 | Deuterium-based passivation of non-planar transistor interfaces | Prashant Majhi, Glenn A. Glass, Tahir Ghani, Aravind S. Killampalli, Mark R. Brazier +1 more | 2021-08-17 |
| 11081570 | Transistors with lattice matched gate structure | Karthik Jambunathan, Glenn A. Glass, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2021-08-03 |
| 11069795 | Transistors with channel and sub-channel regions with distinct compositions and dimensions | Karthik Jambunathan, Glenn A. Glass, Jun Sung Kang, Bruce Beattie, Anupama Bowonder +3 more | 2021-07-20 |
| 11056592 | Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer | Karthik Jambunathan, Cory Bomberger, Glenn A. Glass, Ju H. Nam, Tahir Ghani | 2021-07-06 |
| 11049773 | Art trench spacers to enable fin release for non-lattice matched channels | Gilbert Dewey, Matthew V. Metz, Sean T. Ma, Cheng-Ying Huang, Tahir Ghani +4 more | 2021-06-29 |
| 11024737 | Etching fin core to provide fin doubling | Chandra S. Mohapatra, Glenn A. Glass, Karthik Jambunathan | 2021-06-01 |
| 11024713 | Gradient doping to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Glenn A. Glass, Harold W. Kennel, Ashish Agrawal +3 more | 2021-06-01 |
| 11011620 | Techniques for increasing channel region tensile strain in n-MOS devices | Rishabh Mehandru, Cory E. Weber, Karthik Jambunathan, Glenn A. Glass, Jiong Zhang +2 more | 2021-05-18 |
| 11004978 | Methods of forming doped source/drain contacts and structures formed thereby | Glenn A. Glass, Karthik Jambunathan, Chandra S. Mohapatra, Seiyon Kim | 2021-05-11 |
| 11004954 | Epitaxial buffer to reduce sub-channel leakage in MOS transistors | Karthik Jambunathan, Glenn A. Glass, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2021-05-11 |
| 10998270 | Local interconnect for group IV source/drain regions | Seung Hoon Sung, Glenn A. Glass, Van H. Le, Ashish Agrawal, Benjamin Chu-Kung +1 more | 2021-05-04 |
| 10985263 | Thin film cap to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Van H. Le, Benjamin Chu-Kung +4 more | 2021-04-20 |
| 10978568 | Passivation of transistor channel region interfaces | Glenn A. Glass, Mark R. Brazier, Tahir Ghani, Owen Loh | 2021-04-13 |
| 10957796 | Semiconductor device having doped epitaxial region and its methods of fabrication | Daniel Bourne Aubertine, Tahir Ghani, Abhijit Jayant Pethe | 2021-03-23 |
| 10957769 | High-mobility field effect transistors with wide bandgap fin cladding | Sean T. Ma, Chandra S. Mohapatra, Gilbert Dewey, Willy Rachmady, Harold W. Kennel +3 more | 2021-03-23 |
| 10944006 | Geometry tuning of fin based transistor | Glenn A. Glass, Karthik Jambunathan, Chandra S. Mohapatra, Hei Kam, Nabil G. Mistkawi +2 more | 2021-03-09 |
| 10903364 | Semiconductor device with released source and drain | Willy Rachmady, Sanaz K. Gardner, Chandra S. Mohapatra, Matthew V. Metz, Gilbert Dewey +3 more | 2021-01-26 |
| 10892337 | Backside source/drain replacement for semiconductor devices with metallization on both sides | Glenn A. Glass, Karthik Jambunathan, Chandra S. Mohapatra, Patrick Morrow, Mauro J. Kobrinsky | 2021-01-12 |