Issued Patents All Time
Showing 176–200 of 340 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10580865 | Transistor with a sub-fin dielectric region under a gate | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Nadia M. Rahhal-Orabi +2 more | 2020-03-03 |
| 10580860 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Mark Armstrong, Rafael Rios +2 more | 2020-03-03 |
| 10573750 | Methods of forming doped source/drain contacts and structures formed thereby | Glenn A. Glass, Karthik Jambunathan, Chandra S. Mohapatra, Seiyon Kim | 2020-02-25 |
| 10559689 | Crystallized silicon carbon replacement material for NMOS source/drain regions | Karthik Jambunathan, Glenn A. Glass, Jacob Jensen, Daniel B. Aubertine, Chandra S. Mohapatra | 2020-02-11 |
| 10559683 | Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors | Chandra S. Mohapatra, Glenn A. Glass, Tahir Ghani, Willy Rachmady, Gilbert Dewey +2 more | 2020-02-11 |
| 10553680 | Selective germanium P-contact metalization through trench | Glenn A. Glass, Tahir Ghani | 2020-02-04 |
| 10546858 | Low damage self-aligned amphoteric FINFET tip doping | Jack T. Kavalieros, Chandra S. Mohapatra, Willy Rachmady, Matthew V. Metz, Gilbert Dewey +2 more | 2020-01-28 |
| 10541334 | Techniques for integration of Ge-rich p-MOS source/drain | Glenn A. Glass, Tahir Ghani, Ying-Feng PANG, Nabil G. Mistkawi | 2020-01-21 |
| 10535735 | Contact resistance reduced P-MOS transistors employing Ge-rich contact layer | Glenn A. Glass | 2020-01-14 |
| 10529808 | Dopant diffusion barrier for source/drain to curb dopant atom diffusion | Chandra S. Mohapatra, Harold W. Kennel, Glenn A. Glass, Will Rachmady, Gilbert Dewey +4 more | 2020-01-07 |
| 10516021 | Reduced leakage transistors with germanium-rich channel regions | Glenn A. Glass, Karthik Jambunathan, Chandra S. Mohapatra, Seiyon Kim, Jun Sung Kang | 2019-12-24 |
| 10510848 | Sub-fin sidewall passivation in replacement channel FinFETS | Glenn A. Glass, Ying-Feng PANG, Tahir Ghani, Karthik Jambunathan | 2019-12-17 |
| 10497814 | III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same | Harold W. Kennel, Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra +2 more | 2019-12-03 |
| 10483353 | Transistor including tensile-strained germanium channel | Chandra S. Mohapatra, Glenn A. Glass, Karthik Jambunathan, Willy Rachmady, Gilbert Dewey +2 more | 2019-11-19 |
| 10461082 | Well-based integration of heteroepitaxial N-type transistors with P-type transistors | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +2 more | 2019-10-29 |
| 10461193 | Apparatus and methods to create a buffer which extends into a gated region of a transistor | Chandra S. Mohapatra, Gilbert Dewey, Glenn A. Glass, Willy Rachmady, Jack T. Kavalieros +2 more | 2019-10-29 |
| 10446685 | High-electron-mobility transistors with heterojunction dopant diffusion barrier | Chandra S. Mohapatra, Matthew V. Metz, Harold W. Kennel, Gilbert Dewey, Willy Rachmady +2 more | 2019-10-15 |
| 10431690 | High electron mobility transistors with localized sub-fin isolation | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +3 more | 2019-10-01 |
| 10418464 | Techniques for forming transistors on the same die with varied channel materials | Glenn A. Glass, Hei Kam, Tahir Ghani, Karthik Jambunathan, Chandra S. Mohapatra | 2019-09-17 |
| 10411007 | High mobility field effect transistors with a band-offset semiconductor source/drain spacer | Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Sean T. Ma +2 more | 2019-09-10 |
| 10403752 | Prevention of subchannel leakage current in a semiconductor device with a fin structure | Karthik Jambunathan, Glenn A. Glass, Chandra S. Mohapatra, Stephen M. Cea, Tahir Ghani | 2019-09-03 |
| 10403626 | Fin sculpting and cladding during replacement gate process for transistor channel applications | Glenn A. Glass, Daniel B. Aubertine, Subhash M. Joshi | 2019-09-03 |
| 10396201 | Methods of forming dislocation enhanced strain in NMOS structures | Michael Jackson, Glenn A. Glass, Saurabh Morarka, Chandra S. Mohapatra | 2019-08-27 |
| 10396203 | Pre-sculpting of Si fin elements prior to cladding for transistor channel applications | Glenn A. Glass, Daniel B. Aubertine, Subhash M. Joshi | 2019-08-27 |
| 10388764 | High-electron-mobility transistors with counter-doped dopant diffusion barrier | Chandra S. Mohapatra, Harold W. Kennel, Matthew V. Metz, Gilbert Dewey, Willy Rachmady +2 more | 2019-08-20 |