DH

Daniel J. Hoffman

Applied Materials: 83 patents #62 of 7,310Top 1%
AI Advanced Energy Industries: 19 patents #6 of 173Top 4%
BA B/E Aerospace: 7 patents #80 of 810Top 10%
AS Advanced Thermal Sciences: 7 patents #3 of 15Top 20%
AP Aes Global Holdings Pte.: 4 patents #1 of 53Top 2%
UE US Dept of Energy: 2 patents #577 of 5,099Top 15%
MS Martin Marietta Energy Systems: 1 patents #113 of 298Top 40%
📍 Fort Collins, CO: #4 of 3,421 inventorsTop 1%
🗺 Colorado: #58 of 40,980 inventorsTop 1%
Overall (All Time): #10,671 of 4,157,543Top 1%
116
Patents All Time

Issued Patents All Time

Showing 76–100 of 116 patents

Patent #TitleCo-InventorsDate
7754997 Apparatus and method to confine plasma and reduce flow resistance in a plasma Kallol Bera, Yan Ye, James D. Carducci, Steven C. Shannon, Douglas A. Buchberger, Jr. 2010-07-13
7695983 Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor 2010-04-13
7674353 Apparatus to confine plasma and to enhance flow conductance Kallol Bera, Yan Ye, Michael Kutney, Douglas A. Buchberger, Jr. 2010-03-09
7620511 Method for determining plasma characteristics Steven C. Shannon, Jeremiah T. Pender, Tarreg Mawari 2009-11-17
7618516 Method and apparatus to confine plasma and to enhance flow conductance Kallol Bera, Yan Ye, Michael Kutney, Douglas A. Buchberger, Jr. 2009-11-17
7585685 Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants 2009-09-08
7585384 Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor Kallol Bera, Yan Ye, James D. Carducci, Steven C. Shannon, Douglas A. Buchberger, Jr. 2009-09-08
7554334 Matching network characterization using variable impedance analysis Steven C. Shannon, Steven Lane, Walter R. Merry, Jivko Dinev 2009-06-30
7553679 Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current 2009-06-30
7540971 Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content Kallol Bera, Xiaoye Zhao, Kenny L. Doan, Ezra Robert Gold, Paul Brillhart +2 more 2009-06-02
7541292 Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones Kallol Bera, Xiaoye Zhao, Kenny L. Doan, Ezra Robert Gold, Paul Brillhart +2 more 2009-06-02
7521370 Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power 2009-04-21
7510665 Plasma generation and control using dual frequency RF signals Steven C. Shannon, Alexander Paterson, Theodoros Panagopoulos, John Holland, Dennis S. Grimard 2009-03-31
7479456 Gasless high voltage high contact force wafer contact-cooling electrostatic chuck Douglas A. Buchberger, Jr., Kartik Ramaswamy, Andrew Nguyen, Hiorji Hanawa, Kenneth S. Collins +1 more 2009-01-20
7470626 Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure Ezra Robert Gold 2008-12-30
7452824 Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters Ezra Robert Gold 2008-11-18
7440859 Method for determining plasma characteristics Steven C. Shannon, Jeremiah T. Pender, Tarreg Mawari 2008-10-21
7431859 Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation Kallol Bera, Xiaoye Zhao, Kenny L. Doan, Ezra Robert Gold, Paul Brillhart +2 more 2008-10-07
7375947 Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output Jang-Gyoo Yang, Steven C. Shannon, Douglas H. Burns, Wonseok Lee, Kwang Soo Kim 2008-05-20
7359177 Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output Jang-Gyoo Yang, Steven C. Shannon, Douglas H. Burns, Wonseok Lee, Kwang Soo Kim 2008-04-15
7286948 Method for determining plasma characteristics Steven C. Shannon, Jeremiah T. Pender, Tarreg Mawari 2007-10-23
7247218 Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power 2007-07-24
7221553 Substrate support having heat transfer system Andrew Nguyen, Wing Cheng, Hiroji Hanawa, Semyon L. Kats, Kartik Ramaswamy +4 more 2007-05-22
7196283 Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface Douglas A. Buchberger, Jr., Olga Regelman, James D. Carducci, Keiji Horioka, Jang-Gyoo Yang 2007-03-27
7186943 MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression Yan Ye, Dan Katz, Douglas A. Buchberger, Jr., Xiaoye Zhao, Kang-Lie Chiang +2 more 2007-03-06