DB

Douglas H. Burns

Applied Materials: 17 patents #785 of 7,310Top 15%
AS Advanced Thermal Sciences: 7 patents #3 of 15Top 20%
BA B/E Aerospace: 7 patents #80 of 810Top 10%
LI Lasa Industries: 1 patents #5 of 8Top 65%
Overall (All Time): #196,976 of 4,157,543Top 5%
22
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
8980044 Plasma reactor with a multiple zone thermal control feed forward control apparatus Paul Brillhart, Richard Fovell, Hamid Tavassoli, Douglas A. Buchberger, Jr., Kallol Bera +5 more 2015-03-17
8801893 Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor Paul Brillhart, Richard Fovell, Douglas A. Buchberger, Jr., Kallol Bera, Daniel J. Hoffman +4 more 2014-08-12
8608900 Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes Douglas A. Buchberger, Jr., Paul Brillhart, Richard Fovell, Hamid Tavassoli, Kallol Bera +1 more 2013-12-17
8546267 Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control Paul Brillhart, Richard Fovell, Douglas A. Buchberger, Jr., Kallol Bera, Daniel J. Hoffman +4 more 2013-10-01
8337660 Capacitively coupled plasma reactor having very agile wafer temperature control Douglas A. Buchberger, Jr., Paul Brillhart, Richard Fovell, Hamid Tavassoli, Kallol Bera +5 more 2012-12-25
8329586 Method of processing a workpiece in a plasma reactor using feed forward thermal control Douglas A. Buchberger, Jr., Paul Brillhart, Richard Fovell, Kallol Bera, Daniel J. Hoffman +4 more 2012-12-11
8221580 Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops Douglas A. Buchberger, Jr., Paul Brillhart, Richard Fovell, Hamid Tavassoli, Kallol Bera +5 more 2012-07-17
8157951 Capacitively coupled plasma reactor having very agile wafer temperature control Douglas A. Buchberger, Jr., Paul Brillhart, Richard Fovell, Hamid Tavassoli, Kallol Bera +1 more 2012-04-17
8092639 Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes Douglas A. Buchberger, Jr., Paul Brillhart, Richard Fovell, Hamid Tavassoli, Kallol Bera +5 more 2012-01-10
8092638 Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution Paul Brillhart, Richard Fovell, Hamid Tavassoli, Douglas A. Buchberger, Jr., Kallol Bera +1 more 2012-01-10
8048806 Methods to avoid unstable plasma states during a process transition Michael Kutney, Daniel J. Hoffman, Gerardo Delgadino, Ezra Robert Gold, Ashok Sinha +2 more 2011-11-01
8034180 Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor Paul Brillhart, Richard Fovell, Douglas A. Buchberger, Jr., Kallol Bera, Daniel J. Hoffman 2011-10-11
8021521 Method for agile workpiece temperature control in a plasma reactor using a thermal model Douglas A. Buchberger, Jr., Paul Brillhart, Richard Fovell, Hamid Tavassoli, Kallol Bera +5 more 2011-09-20
8011381 Balanced purge slit valve Jacob Newman 2011-09-06
8012304 Plasma reactor with a multiple zone thermal control feed forward control apparatus Paul Brillhart, Richard Fovell, Hamid Tavassoli, Douglas A. Buchberger, Jr., Kallol Bera +1 more 2011-09-06
7988872 Method of operating a capacitively coupled plasma reactor with dual temperature control loops Paul Brillhart, Richard Fovell, Douglas A. Buchberger, Jr., Kallol Bera, Daniel J. Hoffman +4 more 2011-08-02
7374636 Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Panyin Hughes +4 more 2008-05-20
7375947 Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output Jang-Gyoo Yang, Daniel J. Hoffman, Steven C. Shannon, Wonseok Lee, Kwang Soo Kim 2008-05-20
7359177 Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output Jang-Gyoo Yang, Daniel J. Hoffman, Steven C. Shannon, Wonseok Lee, Kwang Soo Kim 2008-04-15
7316199 Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Qi Li +3 more 2008-01-08
7141757 Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent Daniel J. Hoffman, Jang-Gyoo Yang, Douglas A. Buchberger, Jr. 2006-11-28
4928284 Laser power control system — 1990-05-22