Issued Patents All Time
Showing 25 most recent of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12402391 | Stressed material within gate cut region | Huimei Zhou, Andrew M. Greene, Oleg Gluschenkov, Robert R. Robison, Juntao Li +2 more | 2025-08-26 |
| 12300615 | Infrared debond damage mitigation by copper fill pattern | Mukta G. Farooq, Qianwen Chen, Shahid Butt, Eric D. Perfecto, Katsuyuki Sakuma +1 more | 2025-05-13 |
| 11908723 | Silicon handler with laser-release layers | Akihiro Horibe, Qianwen Chen, Risa Miyazawa, John U. Knickerbocker, Takashi Hisada | 2024-02-20 |
| 11715783 | Uniform horizontal spacer | Oleg Gluschenkov | 2023-08-01 |
| 11282962 | Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) | Huimei Zhou, Ruqiang Bao, Andrew M. Greene, Gen Tsutsui | 2022-03-22 |
| 11257716 | Self-aligned gate cap including an etch-stop layer | Marc A. Bergendahl, Victor Chan, Jeffrey C. Shearer | 2022-02-22 |
| 11222820 | Self-aligned gate cap including an etch-stop layer | Marc A. Bergendahl, Victor Chan, Jeffrey C. Shearer | 2022-01-11 |
| 11107814 | Vertical fin field effect transistor devices with a replacement metal gate | Ruqiang Bao, Junli Wang | 2021-08-31 |
| 11049858 | Vertical fin field effect transistor devices with a replacement metal gate | Ruqiang Bao, Junli Wang | 2021-06-29 |
| 11011624 | Vertical transport field-effect transistor (VFET) with dual top spacer | Shogo Mochizuki, Choonghyun Lee | 2021-05-18 |
| 11004850 | Vertical fin field effect transistor devices with a replacement metal gate | Ruqiang Bao, Junli Wang | 2021-05-11 |
| 10957781 | Uniform horizontal spacer | Oleg Gluschenkov | 2021-03-23 |
| 10943992 | Transistor having straight bottom spacers | Kangguo Cheng, Christopher J. Waskiewicz, Brent A. Anderson, Muthumanickam Sankarapandian, Puneet Harischandra Suvarna +1 more | 2021-03-09 |
| 10832973 | Stress modulation of nFET and pFET fin structures | Huimei Zhou, Kangguo Cheng, Oleg Gluschenkov, Richard A. Conti, James J. Kelly +1 more | 2020-11-10 |
| 10741663 | Encapsulation layer for vertical transport field-effect transistor gate stack | Ruqiang Bao, Hemanth Jagannathan | 2020-08-11 |
| 10741673 | Controlling gate profile by inter-layer dielectric (ILD) nanolaminates | Andrew M. Greene, Fee Li Lie, Huimei Zhou | 2020-08-11 |
| 10734245 | Highly selective dry etch process for vertical FET STI recess | Zhenxing Bi, Muthumanickam Sankarapandian, Richard A. Conti | 2020-08-04 |
| 10679993 | Vertical fin field effect transistor devices with a replacement metal gate | Ruqiang Bao, Junli Wang | 2020-06-09 |
| 10672910 | Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) | Huimei Zhou, Ruqiang Bao, Andrew M. Greene, Gen Tsutsui | 2020-06-02 |
| 10665512 | Stress modulation of nFET and pFET fin structures | Huimei Zhou, Kangguo Cheng, Oleg Gluschenkov, Richard A. Conti, James J. Kelly +1 more | 2020-05-26 |
| 10586700 | Protection of low temperature isolation fill | Richard A. Conti, Dechao Guo, Devendra K. Sadana, Jay William Strane | 2020-03-10 |
| 10535550 | Protection of low temperature isolation fill | Richard A. Conti, Dechao Guo, Devendra K. Sadana, Jay William Strane | 2020-01-14 |
| 10388766 | Vertical transport FET (VFET) with dual top spacer | Shogo Mochizuki, Choonghyun Lee | 2019-08-20 |
| 10249730 | Controlling gate profile by inter-layer dielectric (ILD) nanolaminates | Andrew M. Greene, Fee Li Lie, Huimei Zhou | 2019-04-02 |
| 10170582 | Uniform bottom spacer for vertical field effect transistor | Cheng Chi, Ekmini Anuja De Silva, Tenko Yamashita | 2019-01-01 |