Issued Patents All Time
Showing 226–250 of 255 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6930060 | Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric | Anthony I. Chou, Michael P. Chudzik, Toshiharu Furukawa, Paul Kirsch, Kristen Scheer +1 more | 2005-08-16 |
| 6911384 | Gate structure with independently tailored vertical doping profile | Omer H. Dokumaci, Bruce B. Doris, Jack A. Mandelman, Carl Radens | 2005-06-28 |
| 6908806 | Gate metal recess for oxidation protection and parasitic capacitance reduction | Haining Yang, Ramachandra Divakaruni, Rajeev Malik, Hongwen Yan, Ravikumar Ramachandran | 2005-06-21 |
| 6890833 | Trench isolation employing a doped oxide trench fill | Michael P. Belyansky, Andreas Knorr, Christopher C. Parks | 2005-05-10 |
| 6891192 | Structure and method of making strained semiconductor CMOS transistors having lattice-mismatched semiconductor regions underlying source and drain regions | Huajie Chen, Dureseti Chidambarrao, An Steegen, Haining Yang | 2005-05-10 |
| 6878582 | Low-GIDL MOSFET structure and method for fabrication | Omer H. Dokumaci, Bruce B. Doris, Jack A. Mandelman, Carl Radens | 2005-04-12 |
| 6873010 | High performance logic and high density embedded dram with borderless contact and antispacer | Dureseti Chidambarrao, Omer H. Dokumaci, Bruce B. Doris, Rajarao Jammy, Jack A. Mandelman | 2005-03-29 |
| 6841826 | Low-GIDL MOSFET structure and method for fabrication | Omer H. Dokumaci, Bruce B. Doris, Jack A. Mandelman, Carl Radens | 2005-01-11 |
| 6838334 | Method of fabricating a buried collar | Chung-Yung Sung, Helmut Tews | 2005-01-04 |
| 6806534 | Damascene method for improved MOS transistor | Omer H. Dokumaci, Bruce B. Doris, Jack A. Mandelman, Carl Radens | 2004-10-19 |
| 6797582 | Vertical thermal nitride mask (anti-collar) and processing thereof | Michael P. Chudzik, Rajarao Jammy, Christopher C. Parks, Kenneth T. Settlemyer, Jr., Radhika Srinivasan +1 more | 2004-09-28 |
| 6764883 | Amorphous and polycrystalline silicon nanolaminate | Omer H. Dokumaci, Michael Belyanksy, Bruce B. Doris | 2004-07-20 |
| 6746933 | Pitcher-shaped active area for field effect transistor and method of forming same | Jochen Beintner, Rama Divakaruni, Johnathan E. Faltermeier, Philip L. Flaitz, Carol J. Heenan +5 more | 2004-06-08 |
| 6727142 | Orientation independent oxidation of nitrided silicon | Suryanarayan G. Hegde, Helmut Tews | 2004-04-27 |
| 6723611 | Vertical hard mask | Hiroyuki Akatsu, Porshia S. Parkinson, Ravikumar Ramachandran, Helmut Tews, Kenneth T. Settlemyer, Jr. | 2004-04-20 |
| 6720630 | Structure and method for MOSFET with metallic gate electrode | Jack A. Mandelman, Carl Radens | 2004-04-13 |
| 6709926 | High performance logic and high density embedded dram with borderless contact and antispacer | Dureseti Chidambarrao, Omer H. Dokumaci, Bruce B. Doris, Rajarao Jammy, Jack A. Mandelman | 2004-03-23 |
| 6686637 | Gate structure with independently tailored vertical doping profile | Omer H. Dokumaci, Bruce B. Doris, Jack A. Mandelman, Carl Radens | 2004-02-03 |
| 6667197 | Method for differential oxidation rate reduction for n-type and p-type materials | Bruce B. Doris, Omer H. Dokumaci | 2003-12-23 |
| 6656798 | Gate processing method with reduced gate oxide corner and edge thinning | Helmut Tews, Mary E. Weybright | 2003-12-02 |
| 6576565 | RTCVD process and reactor for improved conformality and step-coverage | Ashima B. Chakravarti, Irene McStay | 2003-06-10 |
| 6566210 | Method of improving gate activation by employing atomic oxygen enhanced oxidation | Atul Ajmera, Omer H. Dokumaci, Bruce B. Doris | 2003-05-20 |
| 6555166 | Method for reducing the microloading effect in a chemical vapor deposition reactor | Ashima B. Chakravarti | 2003-04-29 |
| 6544874 | Method for forming junction on insulator (JOI) structure | Jack A. Mandelman, Kevin K. Chan, Bomy Chen, Rajarao Jammy, Victor Ku +2 more | 2003-04-08 |
| 6514843 | Method of enhanced oxidation of MOS transistor gate corners | Omer H. Dokumaci, Suryanarayan G. Hegde, Richard D. Kaplan, Mukesh V. Khare | 2003-02-04 |