Issued Patents All Time
Showing 201–225 of 255 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7205207 | High performance strained CMOS devices | Bruce B. Doris | 2007-04-17 |
| 7205206 | Method of fabricating mobility enhanced CMOS devices | Michael P. Belyansky, Bruce B. Doris | 2007-04-17 |
| 7202516 | CMOS transistor structure including film having reduced stress by exposure to atomic oxygen | Michael P. Belyansky, Diane C. Boyd, Bruce B. Doris | 2007-04-10 |
| 7198995 | Strained finFETs and method of manufacture | Dureseti Chidambarrao, Omer H. Dokumaci | 2007-04-03 |
| 7176116 | High performance FET with laterally thin extension | Cyril Cabral, Jr., Omer H. Dokumaci | 2007-02-13 |
| 7170126 | Structure of vertical strained silicon devices | Kangguo Cheng, Dureseti Chidambarrao, Rama Divakaruni | 2007-01-30 |
| 7160771 | Forming gate oxides having multiple thicknesses | Anthony I. Chou, Michael P. Chudzik, Toshiharu Furukawa, Paul Kirsch, Byoung Hun Lee +4 more | 2007-01-09 |
| 7144767 | NFETs using gate induced stress modulation | Dureseti Chidambarrao, Omer H. Dokumaci | 2006-12-05 |
| 7138685 | Vertical MOSFET SRAM cell | Louis L. Hsu, Jack A. Mandelman, Carl Radens | 2006-11-21 |
| 7122849 | Stressed semiconductor device structures having granular semiconductor material | Bruce B. Doris, Michael P. Belyansky, Diane C. Boyd, Dureseti Chidambarrao | 2006-10-17 |
| 7119403 | High performance strained CMOS devices | Bruce B. Doris | 2006-10-10 |
| 7084024 | Gate electrode forming methods using conductive hard mask | Dae-Gyu Park | 2006-08-01 |
| 7030012 | Method for manufacturing tungsten/polysilicon word line structure in vertical DRAM | Ramachandra Divakaruni, Oh-Jung Kwon, Rajeev Malik | 2006-04-18 |
| 7026247 | Nanocircuit and self-correcting etching method for fabricating same | Omer H. Dokumaci | 2006-04-11 |
| 7023064 | Temperature stable metal nitride gate electrode | Dae-Gyu Park, Cyril Cabral, Jr., Hyungjun Kim | 2006-04-04 |
| 7023041 | Trench capacitor vertical structure | Giuseppe La Rosa, Thomas W. Dyer, Jack A. Mandelman, Carl Radens, Alvin W. Strong | 2006-04-04 |
| 7015082 | High mobility CMOS circuits | Bruce B. Doris, Huilong Zhu | 2006-03-21 |
| 7002209 | MOSFET structure with high mechanical stress in the channel | Xiangdong Chen, Dureseti Chidambarrao, Brian J. Greene, Kern Rim, Haining Yang | 2006-02-21 |
| 6989322 | Method of forming ultra-thin silicidation-stop extensions in mosfet devices | Cyril Cabral, Jr., Omer H. Dokumaci, Christian Lavoie | 2006-01-24 |
| 6982196 | Oxidation method for altering a film structure and CMOS transistor structure formed therewith | Michael P. Belyansky, Diane C. Boyd, Bruce B. Doris | 2006-01-03 |
| 6977194 | Structure and method to improve channel mobility by gate electrode stress modification | Michael P. Belyansky, Dureseti Chidambarrao, Omer H. Dokumaci, Bruce B. Doris | 2005-12-20 |
| 6975133 | Logic circuits having linear and cellular gate transistors | Victor Wing Chung Chan, Hsing-Jen Wann, Shih-Fen Huang | 2005-12-13 |
| 6974991 | DRAM cell with buried collar and self-aligned buried strap | Kangguo Cheng, Ramachandra Divkaruni, Gary B. Bronner, Carl Radens | 2005-12-13 |
| 6960514 | Pitcher-shaped active area for field effect transistor and method of forming same | Jochen Beintner, Rama Divakaruni, Johnathan E. Faltermeier, Philip L. Flaitz, Carol J. Heenan +5 more | 2005-11-01 |
| 6933577 | High performance FET with laterally thin extension | Cyril Cabral, Jr., Omer H. Dokumaci | 2005-08-23 |