| 12419079 |
Field effect transistor with backside source/drain |
Ruilong Xie, Lawrence A. Clevenger, Brent A. Anderson, Su Chen Fan, Shogo Mochizuki +1 more |
2025-09-16 |
| 12412830 |
Semiconductor device with power via |
Ruilong Xie, Junli Wang, Julien Frougier, Reinaldo Vega, Lawrence A. Clevenger +2 more |
2025-09-09 |
| 12394660 |
Buried power rail after replacement metal gate |
Devika Sarkar Grant, Sagarika Mukesh, Somnath Ghosh, Ruilong Xie |
2025-08-19 |
| 12396227 |
Full wrap around backside contact |
Ruilong Xie, Junli Wang, Julien Frougier, Min Gyu Sung |
2025-08-19 |
| 12300617 |
Self-aligned buried power rail cap for semiconductor devices |
Ruilong Xie, Huimei Zhou, Julien Frougier |
2025-05-13 |
| 12295133 |
SRAM with backside cross-couple |
Ruilong Xie, Albert M. Chu, Carl Radens |
2025-05-06 |
| 12266607 |
Bottom barrier free interconnects without voids |
Kenneth Chun Kuen Cheng, Koichi Motoyama, Cornelius Brown Peethala, Hosadurga Shobha, Joe Lee |
2025-04-01 |
| 12268031 |
Backside power rails and power distribution network for density scaling |
Ruilong Xie, Somnath Ghosh, Sagarika Mukesh, Albert M. Chu, Albert M. Young +6 more |
2025-04-01 |
| 12243913 |
Self-aligned backside contact integration for transistors |
Nikhil Jain, Sagarika Mukesh, Devika Sarkar Grant, Prabudhya Roy Chowdhury, Ruilong Xie |
2025-03-04 |
| 12243819 |
Single-mask alternating line deposition |
Brent A. Anderson, Lawrence A. Clevenger, Christopher J. Penny, Nicholas Anthony Lanzillo, Robert R. Robison |
2025-03-04 |
| 12148663 |
Tiered-profile contact for semiconductor |
Kangguo Cheng |
2024-11-19 |
| 12087691 |
Semiconductor structures with backside gate contacts |
Ruilong Xie, Julien Frougier, Veeraraghavan S. Basker, Lawrence A. Clevenger, Nicolas Loubet +3 more |
2024-09-10 |
| 11990412 |
Buried power rails located in a base layer including first, second, and third etch stop layers |
Ruilong Xie, Stuart A. Sieg, Somnath Ghosh, Rishikesh Krishnan, Alexander Reznicek |
2024-05-21 |
| 11990410 |
Top via interconnect having a line with a reduced bottom dimension |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2024-05-21 |
| 11972977 |
Fabrication of rigid close-pitch interconnects |
Chanro Park, Kenneth Chun Kuen Cheng, Koichi Motoyama |
2024-04-30 |
| 11961759 |
Interconnects having spacers for improved top via critical dimension and overlay tolerance |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2024-04-16 |
| 11915966 |
Backside power rail integration |
Ruilong Xie, Takeshi Nogami, Roy R. Yu, Balasubramanian Pranatharthiharan, Albert M. Young +1 more |
2024-02-27 |
| 11894265 |
Top via with damascene line and via |
Lawrence A. Clevenger, Brent A. Anderson, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2024-02-06 |
| 11869808 |
Top via process with damascene metal |
Lawrence A. Clevenger, Brent A. Anderson, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2024-01-09 |
| 11842961 |
Advanced metal interconnects with a replacement metal |
Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Brent A. Anderson |
2023-12-12 |
| 11823998 |
Top via with next level line selective growth |
Brent A. Anderson, Lawrence A. Clevenger, Christopher J. Penny, Nicholas Anthony Lanzillo, Robert R. Robison |
2023-11-21 |
| 11804436 |
Self-aligned buried power rail cap for semiconductor devices |
Ruilong Xie, Huimei Zhou, Julien Frougier |
2023-10-31 |
| 11804406 |
Top via cut fill process for line extension reduction |
Christopher J. Penny, Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Robert R. Robison |
2023-10-31 |
| 11791258 |
Conductive lines with subtractive cuts |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2023-10-17 |
| 11670542 |
Stepped top via for via resistance reduction |
Brent A. Anderson, Lawrence A. Clevenger, Christopher J. Penny, Nicholas Anthony Lanzillo, Robert R. Robison |
2023-06-06 |
