| 11600565 |
Top via stack |
Brent A. Anderson, Lawrence A. Clevenger, Christopher J. Penny, Nicholas Anthony Lanzillo, Robert R. Robison |
2023-03-07 |
| 11437317 |
Single-mask alternating line deposition |
Brent A. Anderson, Lawrence A. Clevenger, Christopher J. Penny, Nicholas Anthony Lanzillo, Robert R. Robison |
2022-09-06 |
| 11430735 |
Barrier removal for conductor in top via integration scheme |
Brent A. Anderson, Nicholas Anthony Lanzillo, Christopher J. Penny, Lawrence A. Clevenger, Robert R. Robison |
2022-08-30 |
| 11315872 |
Self-aligned top via |
Chanro Park, Koichi Motoyama, Kenneth Chun Kuen Cheng, Chih-Chao Yang |
2022-04-26 |
| 11309383 |
Quad-layer high-k for metal-insulator-metal capacitors |
Takashi Ando, Paul C. Jamison, John G. Massey, Eduard A. Cartier |
2022-04-19 |
| 11302575 |
Subtractive line with damascene second line type |
Brent A. Anderson, Christopher J. Penny, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Robert R. Robison |
2022-04-12 |
| 11295978 |
Interconnects having spacers for improved top via critical dimension and overlay tolerance |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2022-04-05 |
| 11289371 |
Top vias with selectively retained etch stops |
Brent A. Anderson, Lawrence A. Clevenger, Christopher J. Penny, Nicholas Anthony Lanzillo, Robert R. Robison |
2022-03-29 |
| 11276639 |
Conductive lines with subtractive cuts |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2022-03-15 |
| 11276611 |
Top via on subtractively etched conductive line |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2022-03-15 |
| 11232977 |
Stepped top via for via resistance reduction |
Brent A. Anderson, Lawrence A. Clevenger, Christopher J. Penny, Nicholas Anthony Lanzillo, Robert R. Robison |
2022-01-25 |
| 11195753 |
Tiered-profile contact for semiconductor |
Kangguo Cheng |
2021-12-07 |
| 11195795 |
Well-controlled edge-to-edge spacing between adjacent interconnects |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2021-12-07 |
| 11195792 |
Top via stack |
Brent A. Anderson, Lawrence A. Clevenger, Christopher J. Penny, Nicholas Anthony Lanzillo, Robert R. Robison |
2021-12-07 |
| 11189568 |
Top via interconnect having a line with a reduced bottom dimension |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2021-11-30 |
| 11177166 |
Etch stop layer removal for capacitance reduction in damascene top via integration |
Christopher J. Penny, Brent A. Anderson, Lawrence A. Clevenger, Robert R. Robison, Nicholas Anthony Lanzillo |
2021-11-16 |
| 11171084 |
Top via with next level line selective growth |
Brent A. Anderson, Lawrence A. Clevenger, Christopher J. Penny, Nicholas Anthony Lanzillo, Robert R. Robison |
2021-11-09 |
| 11164777 |
Top via with damascene line and via |
Lawrence A. Clevenger, Brent A. Anderson, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2021-11-02 |
| 11164815 |
Bottom barrier free interconnects without voids |
Kenneth Chun Kuen Cheng, Koichi Motoyama, Cornelius Brown Peethala, Hosadurga Shobha, Joe Lee |
2021-11-02 |
| 11158537 |
Top vias with subtractive line formation |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2021-10-26 |
| 11081388 |
Forming barrierless contact |
Koichi Motoyama, Ashim Dutta, Iqbal Rashid Saraf, Benjamin D. Briggs |
2021-08-03 |
| 10943990 |
Gate contact over active enabled by alternative spacer scheme and claw-shaped cap |
Andrew M. Greene, Victor Chan, Gangadhara Raja Muthinti, Veeraraghavan S. Basker, Junli Wang +1 more |
2021-03-09 |
| 10892195 |
Method and structure for forming a vertical field-effect transistor using a replacement metal gate process |
Choonghyun Lee, Kangguo Cheng |
2021-01-12 |
| 10886183 |
Method and structure for forming a vertical field-effect transistor using a replacement metal gate process |
Choonghyun Lee, Kangguo Cheng |
2021-01-05 |
| 10748812 |
Air-gap containing metal interconnects |
Kenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang |
2020-08-18 |
