Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9059194 | High-K and metal filled trench-type EDRAM capacitor with electrode depth and dimension control | Colin J. Brodsky, Anne C. Friedman, Herbert L. Ho, Byeong Y. Kim, Dan M. Mocuta +1 more | 2015-06-16 |
| 6960523 | Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device | Michael Maldei, Prakash Dev, David M. Dobuzinsky, Johnathan E. Faltermeier, Thomas Rupp +3 more | 2005-11-01 |
| 6890815 | Reduced cap layer erosion for borderless contacts | Johnathan E. Faltermeier, Jeremy K. Stephens, David M. Dobuzinsky, Larry Clevenger, Munir D. Naeem +3 more | 2005-05-10 |
| 6884734 | Vapor phase etch trim structure with top etch blocking layer | Frederick Buehrer, Derek Chen, William Chu, Scott W. Crowder, Sadanand V. Deshpande +4 more | 2005-04-26 |
| 6864041 | Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching | Jeffrey J. Brown, Sadanand V. Deshpande, David V. Horak, Maheswaran Surendra, Len Yuan Tsou +2 more | 2005-03-08 |
| 6656375 | Selective nitride: oxide anisotropic etch process | Michael D. Armacost, David M. Dobuzinsky, John C. Malinowski, Hung Y. Ng, Richard S. Wise | 2003-12-02 |
| 6617085 | Wet etch reduction of gate widths | Babar A. Kanh, Naim Moumen, Wesley C. Natzle | 2003-09-09 |
| 6541320 | Method to controllably form notched polysilicon gate structures | Jeffrey J. Brown, Richard S. Wise, Hongwen Yan, Qingyun Yang | 2003-04-01 |
| 6518151 | Dual layer hard mask for eDRAM gate etch process | David M. Dobuzinsky, Babar A. Khan, Joyce C. Liu, Paul Wensley | 2003-02-11 |
| 6509219 | Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch | Len Yuan Tsou, Hongwen Yan, Qingyun Yang | 2003-01-21 |
| 6429067 | Dual mask process for semiconductor devices | Joyce C. Liu, James C. Brighten, Jeffrey J. Brown, John W. Golz, George A. Kaplita +4 more | 2002-08-06 |
| 6419785 | Endpoint detection by chemical reaction | Leping Li, James Albert Gilhooly, Clifford Owen Morgan, III, Cong Wei | 2002-07-16 |
| 6294102 | Selective dry etch of a dielectric film | Delores Bennett, James P. Norum, Hongwen Yan | 2001-09-25 |
| 6228769 | Endpoint detection by chemical reaction and photoionization | Leping Li, James Albert Gilhooly, Clifford Owen Morgan, III, Cong Wei | 2001-05-08 |
| 6180422 | Endpoint detection by chemical reaction | Leping Li, James Albert Gilhooly, Clifford Owen Morgan, III, Cong Wei | 2001-01-30 |
| 6074951 | Vapor phase etching of oxide masked by resist or masking material | Richard L. Kleinhenz, Wesley C. Natzle | 2000-06-13 |
| 6071815 | Method of patterning sidewalls of a trench in integrated circuit manufacturing | Richard L. Kleinhenz, Wesley C. Natzle | 2000-06-06 |
| 6066564 | Indirect endpoint detection by chemical reaction | Leping Li, James Albert Gilhooly, Clifford Owen Morgan, III, Cong Wei | 2000-05-23 |
| 6054328 | Method for cleaning the surface of a dielectric | Peter Richard Duncombe, David E. Kotecki, Robert Benjamin Laibowitz, Wesley C. Natzle | 2000-04-25 |
| 5876879 | Oxide layer patterned by vapor phase etching | Richard L. Kleinhenz, Wesley C. Natzle | 1999-03-02 |
| 5838055 | Trench sidewall patterned by vapor phase etching | Richard L. Kleinhenz, Wesley C. Natzle | 1998-11-17 |
| 5792275 | Film removal by chemical transformation and aerosol clean | Wesley C. Natzle, Jin J. Wu | 1998-08-11 |
| 5766971 | Oxide strip that improves planarity | David C. Ahlgren, Gary B. Bronner, Wesley C. Natzle, Erick G. Walton | 1998-06-16 |
| 5636320 | Sealed chamber with heating lamps provided within transparent tubes | David E. Kotecki, Wesley C. Natzle | 1997-06-03 |
| 5423940 | Supersonic molecular beam etching of surfaces | Lee Chen, Shwu-Jen Jeng, Wesley C. Natzle | 1995-06-13 |