Issued Patents All Time
Showing 101–125 of 1,139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12176404 | Wrap-around contact for nanosheet device | Oleg Gluschenkov, Andrew M. Greene, Pietro Montanini | 2024-12-24 |
| 12176434 | Strained semiconductor FET devices with epitaxial quality improvement | Heng Wu, Alexander Reznicek, Lan Yu | 2024-12-24 |
| 12154945 | Backside CMOS trench epi with close N2P space | Tao Li, Julien Frougier, Nicolas Loubet | 2024-11-26 |
| 12154985 | Moon-shaped bottom spacer for vertical transport field effect transistor (VTFET) devices | Chen Zhang, Julien Frougier, Alexander Reznicek, Shogo Mochizuki | 2024-11-26 |
| 12150310 | Ferroelectric random-access memory cell | Kangguo Cheng, Julien Frougier, Chanro Park, Min Gyu Sung | 2024-11-19 |
| 12142526 | Stacked device with buried interconnect | Chen Zhang, Heng Wu, Julien Frougier, Alexander Reznicek | 2024-11-12 |
| 12136656 | Semiconductor structure having two-dimensional channel | Andrew Gaul, Julien Frougier, Andrew M. Greene, Christopher J. Waskiewicz, Kangguo Cheng | 2024-11-05 |
| 12136655 | Backside electrical contacts to buried power rails | Brent A. Anderson, Albert M. Young, Kangguo Cheng, Julien Frougier, Balasubramanian Pranatharthiharan +2 more | 2024-11-05 |
| 12131994 | Metallization lines on integrated circuit products | Lars Liebmann, Daniel Chanemougame, Geng Han | 2024-10-29 |
| 12112782 | Compact MRAM architecture with magnetic bottom electrode | Julien Frougier, Karthik Yogendra, Dimitri Houssameddine, Kangguo Cheng | 2024-10-08 |
| 12113067 | Forming N-type and P-type horizontal gate-all-around devices | Kangguo Cheng, Juntao Li, Carl Radens | 2024-10-08 |
| 12106969 | Substrate thinning for a backside power distribution network | Balasubramanian Pranatharthiharan, Mukta G. Farooq, Julien Frougier, Takeshi Nogami, Roy R. Yu +1 more | 2024-10-01 |
| 12107014 | Nanosheet transistors with self-aligned gate cut | Julien Frougier, Huimei Zhou, Chanro Park, Kangguo Cheng | 2024-10-01 |
| 12107132 | Source/drain contact positioning under power rail | Indira Seshadri, Eric R. Miller, Kangguo Cheng | 2024-10-01 |
| 12100766 | Integrated short channel omega gate FinFET and long channel FinFET | Alexander Reznicek, Oleg Gluschenkov | 2024-09-24 |
| 12100744 | Wrap around contact process margin improvement with early contact cut | Veeraraghavan S. Basker, Andrew M. Greene, Alexander Reznicek, Yao Yao | 2024-09-24 |
| 12100746 | Gate-all-around field effect transistor with bottom dielectric isolation | Julien Frougier, Nicolas Loubet, Andrew M. Greene, Maruf Amin Bhuiyan, Veeraraghavan S. Basker | 2024-09-24 |
| 12094972 | Gate-all-around field effect transistors having end portions of nanosheet channel layers adjacent to source/drain regions being wider than the center portions | Julien Frougier, Kangguo Cheng, Chanro Park | 2024-09-17 |
| 12094949 | Fin-type field effect transistor having a wrap-around gate with bottom isolation and inner spacers to reduce parasitic capacitance | Choonghyun Lee, Chanro Park, Kangguo Cheng | 2024-09-17 |
| 12087691 | Semiconductor structures with backside gate contacts | Julien Frougier, Veeraraghavan S. Basker, Lawrence A. Clevenger, Nicolas Loubet, Dechao Guo +3 more | 2024-09-10 |
| 12087770 | Complementary field effect transistor devices | Julien Frougier, Heng Wu, Chen Zhang, Kangguo Cheng | 2024-09-10 |
| 12080714 | Buried local interconnect between complementary field-effect transistor cells | Reinaldo Vega, Alexander Reznicek, Kangguo Cheng | 2024-09-03 |
| 12080709 | Dual inner spacer epitaxy in monolithic stacked FETs | Sagarika Mukesh, Julien Frougier, Nicolas Loubet | 2024-09-03 |
| 12080640 | Self-aligned via to metal line for interconnect | Tao Li, Tsung-Sheng Kang, Alexander Reznicek | 2024-09-03 |
| 12075627 | AI accelerator with MRAM, PCM, and recessed PCM bottom electrode | Alexander Reznicek, Wei Wang, Tao Li, Tsung-Sheng Kang | 2024-08-27 |