Issued Patents All Time
Showing 401–425 of 1,139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11049979 | Long channel nanosheet FET having tri-layer spacers | Xin Miao, Jingyun Zhang, Choonghyun Lee | 2021-06-29 |
| 11043588 | Vertical field effect transistor | Ali Razavieh | 2021-06-22 |
| 11043418 | Middle of the line self-aligned direct pattern contacts | Jason E. Stephens, Daniel Chanemougame, Lars Liebmann, Gregory A. Northrop | 2021-06-22 |
| 11043411 | Integration of air spacer with self-aligned contact in transistor | Chanro Park, Julien Frougier, Kangguo Cheng | 2021-06-22 |
| 11038106 | Phase change memory cell with a metal layer | Carl Radens, Kangguo Cheng, Juntao Li | 2021-06-15 |
| 11031485 | Transistor with airgap spacer | Kangguo Cheng, Juntao Li, Chanro Park | 2021-06-08 |
| 11031295 | Gate cap last for self-aligned contact | Chanro Park, Kangguo Cheng, Choonghyun Lee | 2021-06-08 |
| 11024720 | Non-self aligned contact semiconductor devices | Hari Prasad Amanapu, Kangguo Cheng, Chanro Park | 2021-06-01 |
| 11024670 | Forming an MRAM device over a transistor | Alexander Reznicek, Heng Wu, Lan Yu | 2021-06-01 |
| 11024539 | Self-aligned cut process for self-aligned via process window | Chih-Chao Yang, Jing Guo, Kangguo Cheng | 2021-06-01 |
| 11024536 | Contact interlayer dielectric replacement with improved SAC cap retention | Adra Carr, Vimal Kamineni, Andrew M. Greene, Nigel G. Cave, Veeraraghavan S. Basker | 2021-06-01 |
| 11018240 | Vertical field effect transistor with reduced parasitic capacitance | Kangguo Cheng, Tenko Yamashita, Chun-Chen Yeh | 2021-05-25 |
| 11011638 | Transistor having airgap spacer around gate structure | Julien Frougier, Kangguo Cheng, Chanro Park | 2021-05-18 |
| 11011626 | Fin field-effect transistor with reduced parasitic capacitance and reduced variability | Kangguo Cheng, Juntao Li, Chanro Park | 2021-05-18 |
| 11011528 | Asymmetric gate edge spacing for SRAM structures | Alexander Reznicek, Chun-Chen Yeh, Chen Zhang | 2021-05-18 |
| 11011417 | Method and structure of metal cut | Su Chen Fan, Andrew M. Greene, Veeraraghavan S. Basker | 2021-05-18 |
| 11004984 | Low resistivity epitaxially formed contact region for nanosheet external resistance reduction | Heng Wu, Oleg Gluschenkov, Lan Yu | 2021-05-11 |
| 11004750 | Middle of the line contact formation | Chanro Park, Balasubramanian Pranatharthiharan, Nicolas Loubet | 2021-05-11 |
| 10998424 | Vertical metal-air transistor | Juntao Li, Kangguo Cheng, Chanro Park | 2021-05-04 |
| 10998422 | Methods, apparatus and system for a self-aligned gate cut on a semiconductor device | Hui Zang, Laertis Economikos | 2021-05-04 |
| 10998234 | Nanosheet bottom isolation and source or drain epitaxial growth | Veeraraghavan S. Basker, Nicolas Loubet, Balasubramanian Pranatharthiharan | 2021-05-04 |
| 10998233 | Mechanically stable complementary field effect transistors | Alexander Reznicek, Chun-Chen Yeh, Chen Zhang | 2021-05-04 |
| 10991808 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2021-04-27 |
| 10985260 | Trench silicide contacts with high selectivity process | Andrew M. Greene, Balasubramanian Pranatharthiharan | 2021-04-20 |
| 10985073 | Vertical field effect transistor replacement metal gate fabrication | Wenyu Xu, Brent A. Anderson, Zuoguang Liu | 2021-04-20 |