Issued Patents All Time
Showing 376–400 of 1,139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11121174 | MRAM integration into the MOL for fast 1T1M cells | Alexander Reznicek, Michael Rizzolo | 2021-09-14 |
| 11107827 | Integration of split gate metal-oxide-nitride-oxide-semiconductor memory with vertical FET | Julien Frougier, Kangguo Cheng | 2021-08-31 |
| 11107752 | Half buried nFET/pFET epitaxy source/drain strap | Jingyun Zhang, Alexander Reznicek, Bruce B. Doris | 2021-08-31 |
| 11107731 | Self-aligned repaired top via | Chih-Chao Yang, Carl Radens, Juntao Li, Kangguo Cheng | 2021-08-31 |
| 11101348 | Nanosheet field effect transistor with spacers between sheets | Julien Frougier, Nigel G. Cave, Steven R. Soss, Daniel Chanemougame, Steven Bentley +2 more | 2021-08-24 |
| 11101217 | Buried power rail for transistor devices | Alexander Reznicek, Junli Wang, Kangguo Cheng | 2021-08-24 |
| 11094883 | Structure and method to fabricate resistive memory with vertical pre-determined filament | Chanro Park, Kangguo Cheng, Choonghyun Lee | 2021-08-17 |
| 11094803 | Nanosheet device with tall suspension and tight contacted gate poly-pitch | Julien Frougier, Ardasheir Rahman, Veeraraghavan S. Basker, Alexander Reznicek | 2021-08-17 |
| 11094784 | Gate-all-around field effect transistor having stacked U shaped channels configured to improve the effective width of the transistor | Kangguo Cheng, Julien Frougier, Chanro Park, Tenko Yamashita | 2021-08-17 |
| 11094781 | Nanosheet structures having vertically oriented and horizontally stacked nanosheets | Kangguo Cheng, Huimei Zhou, Ardasheir Rahman | 2021-08-17 |
| 11092551 | Staircase surface-enhanced raman scattering substrate | Kangguo Cheng, Chanro Park, Juntao Li | 2021-08-17 |
| 11088288 | Stacked-nanosheet semiconductor structures with support structures | Jingyun Zhang, Xin Miao, Alexander Reznicek | 2021-08-10 |
| 11087993 | Double replacement metal line patterning | Chih-Chao Yang, Kangguo Cheng, Hsueh-Chung Chen | 2021-08-10 |
| 11081568 | Protective bilayer inner spacer for nanosheet devices | Yao Yao, Andrew M. Greene, Veeraraghavan S. Basker | 2021-08-03 |
| 11081172 | On-chip security key with phase change memory | Kangguo Cheng, Carl Radens, Juntao Li | 2021-08-03 |
| 11075334 | Spin-orbit-torque magneto-resistive random access memory with stepped bottom electrode | Alexander Reznicek, Heng Wu, Lan Yu | 2021-07-27 |
| 11069744 | Steep-switch vertical field effect transistor | Daniel Chanemougame, Julien Frougier, Nicolas Loubet | 2021-07-20 |
| 11069684 | Stacked field effect transistors with reduced coupling effect | Chun-Chen Yeh, Dechao Guo, Alexander Reznicek | 2021-07-20 |
| 11069680 | FinFET-based integrated circuits with reduced parasitic capacitance | Juntao Li, Kangguo Cheng, Chanro Park | 2021-07-20 |
| 11069677 | Semiconductor device comprising metal-insulator-metal (MIM) capacitor | Chanro Park, Kangguo Cheng, Juntao Li | 2021-07-20 |
| 11062937 | Dielectric isolation for nanosheet devices | Kangguo Cheng, Tenko Yamashita, Chun-Chen Yeh | 2021-07-13 |
| 11056588 | Vertical transport field effect transistor with bottom source/drain | Heng Wu, Gen Tsutsui, Lan Yu | 2021-07-06 |
| 11056570 | Nanosheet transistor with dual inner airgap spacers | Kangguo Cheng, Chun-Chen Yeh, Tenko Yamashita | 2021-07-06 |
| 11056537 | Self-aligned gate contact integration with metal resistor | Xin Miao, Richard A. Conti, Kangguo Cheng | 2021-07-06 |
| 11056399 | Source and drain EPI protective spacer during single diffusion break formation | Yao Yao, Andrew M. Greene, Veeraraghavan S. Basker, Kangguo Cheng, Zhenxing Bi | 2021-07-06 |