Issued Patents All Time
Showing 326–350 of 1,139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11227922 | Sloped epitaxy buried contact | Tao Li, Tsung-Sheng Kang, Alexander Reznicek, Oleg Gluschenkov | 2022-01-18 |
| 11227801 | Formation of contacts for semiconductor devices | Su Chen Fan, Heng Wu, Julien Frougier | 2022-01-18 |
| 11222979 | Field-effect transistor devices with sidewall implant under bottom dielectric isolation | Xin Miao, Alexander Reznicek, Jingyun Zhang | 2022-01-11 |
| 11217692 | Vertical field effect transistor with bottom spacer | Christopher J. Waskiewicz, Jay William Strane, Hemanth Jagannathan | 2022-01-04 |
| 11211452 | Transistor having stacked source/drain regions with formation assistance regions and multi-region wrap-around source/drain contacts | Reinaldo Vega, Kangguo Cheng, Chanro Park, Juntao Li | 2021-12-28 |
| 11211291 | Via formation with robust hardmask removal | Christopher J. Waskiewicz, Kangguo Cheng, Chih-Chao Yang | 2021-12-28 |
| 11211462 | Using selectively formed cap layers to form self-aligned contacts to source/drain regions | Chanro Park, Choonghyun Lee, Kangguo Cheng | 2021-12-28 |
| 11205590 | Self-aligned contacts for MOL | Su Chen Fan, Adra Carr, Kangguo Cheng | 2021-12-21 |
| 11205698 | Multiple work function nanosheet transistors with inner spacer modulation | Takashi Ando, Alexander Reznicek, Pouya Hashemi | 2021-12-21 |
| 11205592 | Self-aligned top via structure | Cheng Chi, Chih-Chao Yang, Kangguo Cheng | 2021-12-21 |
| 11201153 | Stacked field effect transistor with wrap-around contacts | Chun-Chen Yeh, Alexander Reznicek, Dechao Guo | 2021-12-14 |
| 11201152 | Method, apparatus, and system for fin-over-nanosheet complementary field-effect-transistor | Steven R. Soss, Steven Bentley, Daniel Chanemougame, Julien Frougier, Bipul C. Paul +1 more | 2021-12-14 |
| 11195746 | Nanosheet transistor with self-aligned dielectric pillar | Kangguo Cheng, Julien Frougier | 2021-12-07 |
| 11195745 | Forming single and double diffusion breaks for fin field-effect transistor structures | Juntao Li, Kangguo Cheng, Junli Wang | 2021-12-07 |
| 11195911 | Bottom dielectric isolation structure for nanosheet containing devices | Xin Miao, Takashi Ando, Jingyun Zhang | 2021-12-07 |
| 11189713 | Nanosheet transistor having wrap-around bottom isolation | Lan Yu, Heng Wu, Kangguo Cheng | 2021-11-30 |
| 11189725 | VTFET with cell height constraints | Heng Wu, Lan Yu, Alexander Reznicek, Junli Wang | 2021-11-30 |
| 11189712 | Formation of vertical transport field-effect transistor structure having increased effective width | Alexander Reznicek, Takashi Ando, Pouya Hashemi | 2021-11-30 |
| 11183561 | Nanosheet transistor with inner spacers | Kangguo Cheng, Chanro Park, Juntao Li | 2021-11-23 |
| 11183581 | Vertical field effect transistor having improved uniformity | Kangguo Cheng, Juntao Li, Chanro Park | 2021-11-23 |
| 11183632 | Self-aligned edge passivation for robust resistive random access memory connection | Takashi Ando, Pouya Hashemi, Alexander Reznicek | 2021-11-23 |
| 11183389 | Fin field effect transistor devices with self-aligned gates | Wenyu Xu, Stuart A. Sieg, John R. Sporre | 2021-11-23 |
| 11177632 | Augmented semiconductor lasers with spontaneous emissions blockage | Julien Frougier, Kangguo Cheng, Chanro Park | 2021-11-16 |
| 11177181 | Scalable device for FINFET technology | Kangguo Cheng, Juntao Li, Chanro Park | 2021-11-16 |
| 11177258 | Stacked nanosheet CFET with gate all around structure | Alexander Reznicek, Heng Wu, Lan Yu | 2021-11-16 |