Issued Patents All Time
Showing 276–300 of 1,139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11456181 | Cross-bar fin formation | Kangguo Cheng, Chanro Park, Juntao Li | 2022-09-27 |
| 11450659 | On-chip decoupling capacitor | Alexander Reznicek, Jingyun Zhang, Lan Yu | 2022-09-20 |
| 11450570 | Single diffusion cut for gate structures | Hui Zang | 2022-09-20 |
| 11450678 | Split gate (SG) memory device and novel methods of making the SG-memory device | Hui Zang, Shesh Mani Pandey | 2022-09-20 |
| 11444238 | Scalable heat sink and magnetic shielding for high density MRAM arrays | Julien Frougier, Heng Wu, Chen Zhang, Bruce B. Doris | 2022-09-13 |
| 11443982 | Formation of trench silicide source or drain contacts without gate damage | Andrew M. Greene, Laertis Economikos, Veeraraghavan S. Basker, Chanro Park, Hui Zang | 2022-09-13 |
| 11437489 | Techniques for forming replacement metal gate for VFET | Heng Wu, Chanro Park, Kangguo Cheng | 2022-09-06 |
| 11437286 | Middle of line structures | Hui Zang | 2022-09-06 |
| 11424403 | Magnetoresistive random-access memory cell having a metal line connection | Bruce B. Doris, Michael Rizzolo, Alexander Reznicek | 2022-08-23 |
| 11411049 | Symmetric read operation resistive random-access memory cell with bipolar junction selector | Alexander Reznicek, Bahman Hekmatshoartabari, Heng Wu | 2022-08-09 |
| 11411048 | Magnetoresistive random-access memory device structure | Heng Wu, Alexander Reznicek, Julien Frougier, Chen Zhang, Bruce B. Doris | 2022-08-09 |
| 11398480 | Transistor having forked nanosheets with wraparound contacts | Jingyun Zhang, Alexander Reznicek, Xin Miao | 2022-07-26 |
| 11387319 | Nanosheet transistor device with bottom isolation | Veeraraghavan S. Basker, Andrew M. Greene, Pietro Montanini | 2022-07-12 |
| 11380842 | Phase change memory cell with second conductive layer | Juntao Li, Kangguo Cheng, Junli Wang | 2022-07-05 |
| 11374167 | Reducing parasitic bottom electrode resistance of embedded MRAM | Julien Frougier, Alexander Reznicek, Bruce B. Doris | 2022-06-28 |
| 11374111 | Forming replacement low-k spacer in tight pitch fin field effect transistors | Xiuyu Cai, Chun-Chen Yeh, Qing Liu | 2022-06-28 |
| 11362194 | Transistor having confined source/drain regions with wrap-around source/drain contacts | Alexander Reznicek, Kangguo Cheng, Marc A. Bergendahl | 2022-06-14 |
| 11355633 | Vertical field effect transistor with bottom source-drain region | Alexander Reznicek, Chun-Chen Yeh, Balasubramanian S. Pranatharthi Haran | 2022-06-07 |
| 11349001 | Replacement gate cross-couple for static random-access memory scaling | Carl Radens, Kangguo Cheng, Veeraraghavan S. Basker, Juntao Li | 2022-05-31 |
| 11335804 | Scalable vertical transistor bottom source-drain epitaxy | Chun-Chen Yeh, Alexander Reznicek | 2022-05-17 |
| 11329167 | Fishbone long channel nanosheet device | Jingyun Zhang, Xin Miao, Alexander Reznicek | 2022-05-10 |
| 11322402 | Self-aligned top via scheme | Chih-Chao Yang, Carl Radens, Juntao Li, Kangguo Cheng | 2022-05-03 |
| 11316105 | Phase change material switch and method of fabricating same | Tian Shen, Kevin W. Brew, Heng Wu, Jingyun Zhang | 2022-04-26 |
| 11315938 | Stacked nanosheet rom | Alexander Reznicek, Karthik Balakrishnan, Bahman Hekmatshoartabari | 2022-04-26 |
| 11315799 | Back end of line structures with metal lines with alternating patterning and metallization schemes | Chanro Park, Chih-Chao Yang, Kangguo Cheng, Juntao Li | 2022-04-26 |