JM

Jack A. Mandelman

IBM: 439 patents #33 of 70,183Top 1%
Infineon Technologies Ag: 27 patents #440 of 7,486Top 6%
SA Siemens Aktiengesellschaft: 18 patents #396 of 22,248Top 2%
KT Kabushiki Kaisha Toshiba: 4 patents #6,684 of 21,451Top 35%
SM Siemens Microelectronics: 2 patents #2 of 40Top 5%
SC Siemens Components: 1 patents #6 of 30Top 20%
📍 Underhill, VT: #1 of 98 inventorsTop 2%
🗺 Vermont: #4 of 4,968 inventorsTop 1%
Overall (All Time): #503 of 4,157,543Top 1%
440
Patents All Time

Issued Patents All Time

Showing 326–350 of 440 patents

Patent #TitleCo-InventorsDate
6242310 Method of forming buried-strap with reduced outdiffusion including removing a sacrificial insulator leaving a gap and supporting spacer Ramachandra Divakaruni 2001-06-05
6239649 Switched body SOI (silicon on insulator) circuits and fabrication method therefor Claude L. Bertin, John J. Ellis-Monaghan, Erik L. Hedberg, Terence B. Hook, Edward J. Nowak +3 more 2001-05-29
6236077 Trench electrode with intermediate conductive barrier layer Jeffrey P. Gambino, Rajarao Jammy, Carl Radens 2001-05-22
6232173 Process for forming a memory structure that includes NVRAM, DRAM, and/or SRAM memory structures on one substrate and process for forming a new NVRAM cell structure Louis L. Hsu, Fariborz Assaderaghi 2001-05-15
6228745 Selective reduction of sidewall slope on isolation edge Donald C. Wheeler, Louis L. Hsu, Rebecca D. Mih 2001-05-08
6225158 Trench storage dynamic random access memory cell with vertical transfer device Toshiharu Furukawa, Mark C. Hakey, David V. Horak, William H. Ma 2001-05-01
6222244 Electrically blowable fuse with reduced cross-sectional area Kenneth C. Arndt, Dureseti Chidambarrao, Louis L. Hsu, Carl Radens 2001-04-24
6222218 DRAM trench Rajarao Jammy, Carl Radens 2001-04-24
6207540 Method for manufacturing high performance MOSFET device with raised source and drain Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, William H. Ma 2001-03-27
6204532 Pillar transistor incorporating a body contact Jeffrey P. Gambino, Stephen A. Parke, Matthew R. Wordeman 2001-03-20
6204140 Dynamic random access memory Ulrike Gruening, Jochen Beintner, Scott D. Halle, Carl Radens, Juergen Wittmann +1 more 2001-03-20
6194755 Low-resistance salicide fill for trench capacitors Jeffrey P. Gambino, Ulrike Gruening, Carl Radens 2001-02-27
6194736 Quantum conductive recrystallization barrier layers Susan E. Chaloux, Tze-Chiang Chen, Johnathan E. Faltermeier, Ulrike Gruening, Rajarao Jammy +4 more 2001-02-27
6190959 Semiconductor memory array having sublithographic spacing between adjacent trenches and method for making the same Gary B. Bronner, Donald J. Samuels 2001-02-20
6190986 Method of producing sulithographic fuses using a phase shift mask Kenneth C. Arndt, Louis L. Hsu, K. Paul Muller 2001-02-20
6184107 Capacitor trench-top dielectric for self-aligned device isolation Rama Divakaruni, Ulrike Gruening, Byeong Y. Kim, Larry Nesbit, Carl Radens 2001-02-06
6184549 Trench storage dynamic random access memory cell with vertical transfer device Toshiharu Furukawa, Mark C. Hakey, David V. Horak, William H. Ma 2001-02-06
6177809 Redundant input/output driver circuit William R. Tonti, Anthony R. Bonaccio, Claude L. Bertin, Howard L. Kalter, John A. Fifield 2001-01-23
6177299 Transistor having substantially isolated body and method of making the same Louis L. Hsu 2001-01-23
6177818 Complementary depletion switch body stack off-chip driver Claude L. Bertin, Anthony R. Bonaccio, Howard L. Kalter, Thomas M. Maffitt, William R. Tonti 2001-01-23
6174762 Salicide device with borderless contact Gary B. Bronner, Jeffrey P. Gambino, Louis L. Hsu, Carl Radens, William R. Tonti 2001-01-16
6163045 Reduced parasitic leakage in semiconductor devices Louis L. Hsu, Johann Alsmeier, William R. Tonti 2000-12-19
6153902 Vertical DRAM cell with wordline self-aligned to storage trench Toshiharu Furukawa, Ulrike Gruening, David V. Horak, Carl Radens, Thomas Rupp 2000-11-28
6153474 Method of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrate Herbert L. Ho, Radhika Srinivasan, Scott D. Halle, Erwin Hammerl, David M. Dobuzinsky +1 more 2000-11-28
6150212 Shallow trench isolation method utilizing combination of spacer and fill Ramachandra Divakaruni, Jeffrey P. Gambino, Carl Radens, William R. Tonti 2000-11-21