TM

Thomas M. Maffitt

IBM: 36 patents #2,696 of 70,183Top 4%
Globalfoundries: 4 patents #817 of 4,424Top 20%
Infineon Technologies Ag: 2 patents #3,160 of 7,486Top 45%
Overall (All Time): #79,404 of 4,157,543Top 2%
40
Patents All Time

Issued Patents All Time

Showing 25 most recent of 40 patents

Patent #TitleCo-InventorsDate
11152063 Writing multiple levels in a phase change memory Chung H. Lam, Scott C. Lewis, Jack Morrish 2021-10-19
10998045 Writing multiple levels in a phase change memory Chung H. Lam, Scott C. Lewis, Jack Morrish 2021-05-04
10943658 Writing multiple levels in a phase change memory Chung H. Lam, Scott C. Lewis, Jack Morrish 2021-03-09
10937496 Writing multiple levels in a phase change memory Chung H. Lam, Scott C. Lewis, Jack Morrish 2021-03-02
10762959 Writing multiple levels in a phase change memory Chung H. Lam, Scott C. Lewis, Jack Morrish 2020-09-01
10726897 Trimming MRAM sense amp with offset cancellation John K. DeBrosse, Matthew R. Wordeman 2020-07-28
10726898 MRAM sense amplifier with second stage offset cancellation John Kenneth Debrose 2020-07-28
10692576 Writing multiple levels in a phase change memory Chung H. Lam, Scott C. Lewis, Jack Morrish 2020-06-23
10658022 High gain sense amplifier with offset cancellation for magnetoresistive random access memory 2020-05-19
10566057 Writing multiple levels in a phase change memory Chung H. Lam, Scott C. Lewis, Jack Morrish 2020-02-18
10535403 Writing multiple levels in a phase change memory Chung H. Lam, Scott C. Lewis, Jack Morrish 2020-01-14
10424375 Writing multiple levels in a phase change memory Chung H. Lam, Scott C. Lewis, Jack Morrish 2019-09-24
10037802 Phase change memory with an incrementally ramped write-reference voltage and an incrementally ramped read-reference voltage Chung H. Lam, Scott C. Lewis, Jack Morrish 2018-07-31
9911492 Writing multiple levels in a phase change memory using a write reference voltage that incrementally ramps over a write period Chung H. Lam, Scott C. Lewis, Jack Morrish 2018-03-06
9704575 Content-addressable memory having multiple reference matchlines to reduce latency Igor Arsovski, Michael T. Fragano, Robert M. Houle 2017-07-11
9601200 TCAM structures with reduced power supply noise Igor Arsovski, Michael T. Fragano 2017-03-21
9583192 Matchline precharge architecture for self-reference matchline sensing Igor Arsovski, Michael T. Fragano, Robert M. Houle 2017-02-28
9502107 Writing multiple levels in a phase change memory Chung H. Lam, Scott C. Lewis, Jack Morrish 2016-11-22
9384792 Offset-cancelling self-reference STT-MRAM sense amplifier Anthony R. Bonaccio, John K. DeBrosse 2016-07-05
9299431 Writing multiple levels in a phase change memory using a write/read reference voltage ramping up over a write/read period Chung H. Lam, Scott C. Lewis, Jack Morrish 2016-03-29
8520458 Phase change memory cycle timer and method John A. Gabric, Mark C. H. Lamorey 2013-08-27
8345475 Non volatile cell and architecture with single bit random access read, program and erase Chung H. Lam, Mark C. H. Lamorey 2013-01-01
8300489 Charge pump system and method utilizing adjustable output charge and compilation system and method for use by the charge pump John A. Fifield, Dale E. Pontius 2012-10-30
8233345 Phase change memory cycle timer and method John A. Gabric, Mark C. H. Lamorey 2012-07-31
7882455 Circuit and method using distributed phase change elements for across-chip temperature profiling Nazmul Habib, Mark C. H. Lamorey, Robert McMahon 2011-02-01