Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
LN

Larry Nesbit — 41 Patents

IBM: 41 patents #2,269 of 70,183Top 4%
Infineon Technologies Ag: 5 patents #1,759 of 7,486Top 25%
SMSiemens Microelectronics: 1 patents #5 of 40Top 15%
Williston, VT: #15 of 203 inventorsTop 8%
Vermont: #164 of 4,968 inventorsTop 4%
Overall (All Time): #75,001 of 4,157,543Top 2%
41 Patents All Time
Larry Nesbit has been granted 41 US patents while listed as an inventor at IBM. The first was granted in 1983 and the most recent in August 2011. Larry Nesbit ranks #75,001 of 4,157,543 US inventors in our database (top 1.8%). Patent records list Larry Nesbit in Williston, VT, US.

Issued Patents All Time

Showing 1–25 of 41 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
7994575 Metal-oxide-semiconductor device structures with tailored dopant depth profiles Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III 2011-08-09 $2,733,000
7951660 Methods for fabricating a metal-oxide-semiconductor device structure Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III 2011-05-31 $4,283,000
7932549 Carbon nanotube conductor for trench capacitors Steven J. Holmes, Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III 2011-04-26 $6,102,000
7851064 Methods and structures for promoting stable synthesis of carbon nanotubes Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more 2010-12-14 $5,212,000
7829883 Vertical carbon nanotube field effect transistors and arrays Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more 2010-11-09 $6,046,000
7820502 Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more 2010-10-26 $4,266,000
7691720 Vertical nanotube semiconductor device structures and methods of forming the same Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more 2010-04-06 $5,890,000
7585614 Sub-lithographic imaging techniques and processes Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +2 more 2009-09-08 $16,659,000
7525156 Shallow trench isolation fill by liquid phase deposition of SiO2 Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III, Peter H. Mitchell 2009-04-28 $8,592,000
7504314 Method for fabricating oxygen-implanted silicon on insulation type semiconductor and semiconductor formed therefrom Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III 2009-03-17 $4,806,000
7393779 Shrinking contact apertures through LPD oxide Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III 2008-07-01 $7,630,000
7374793 Methods and structures for promoting stable synthesis of carbon nanotubes Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David Vaclav Hotak, Charles W. Koburger, III +1 more 2008-05-20 $8,483,000
7329567 Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Peter H. Mitchell 2008-02-12 $10,496,000
7273794 Shallow trench isolation fill by liquid phase deposition of SiO2 Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III, Peter H. Mitchell 2007-09-25 $7,894,000
7264415 Methods of forming alternating phase shift masks having improved phase-shift tolerance Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more 2007-09-04 $5,939,000
7256114 Process for oxide cap formation in semiconductor manufacturing Steven J. Holmes, Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III 2007-08-14 $10,148,000
7250347 Double-gate FETs (Field Effect Transistors) Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more 2007-07-31 $9,877,000
7244980 Line mask defined active areas for 8F2 DRAM cells with folded bit lines and deep trench patterns Rolf Weis, Ramachandra Divakaruni 2007-07-17
7211844 Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Peter H. Mitchell 2007-05-01 $7,088,000
7038299 Selective synthesis of semiconducting carbon nanotubes Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more 2006-05-02 $4,743,000
6998204 Alternating phase mask built by additive film deposition Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more 2006-02-14 $5,958,000
6989308 Method of forming FinFET gates without long etches Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David Vaclav Hofak, Charles W. Koburger, III +1 more 2006-01-24 $7,705,000
6890828 Method for supporting a bond pad in a multilevel interconnect structure and support structure formed thereby David V. Horak, Charles W. Koburger, III, Peter H. Mitchell 2005-05-10 $5,425,000
6875685 Method of forming gas dielectric with support structure Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III, Peter H. Mitchell +1 more 2005-04-05 $5,479,000
6790739 Structure and methods for process integration in vertical DRAM cell fabrication Rajeev Malik, Jochen Beintner, Rama Divakaruni 2004-09-14 $5,712,000