| 11978820 |
Thin single-crystal silicon solar cells mounted to a structural support member and method of fabricating |
David V. Horak, Mark C. Hakey, William R. Tonti, James M. Leas |
2024-05-07 |
|
| 10589445 |
Method of cleaving a single crystal substrate parallel to its active planar surface and method of using the cleaved daughter substrate |
Toshiharu Furukawa, Mark C. Hakey, David V. Horak, William P. Parker, William R. Tonti |
2020-03-17 |
|
| 7989222 |
Method of making integrated circuit chip utilizing oriented carbon nanotube conductive layers |
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III |
2011-08-02 |
$4,890,000 |
| 7889317 |
Immersion lithography with equalized pressure on at least projection optics component and wafer |
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak |
2011-02-15 |
$3,434,000 |
| 7851064 |
Methods and structures for promoting stable synthesis of carbon nanotubes |
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more |
2010-12-14 |
$5,212,000 |
| 7829883 |
Vertical carbon nanotube field effect transistors and arrays |
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more |
2010-11-09 |
$6,046,000 |
| 7820502 |
Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby |
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more |
2010-10-26 |
$4,266,000 |
| 7786583 |
Integrated circuit chip utilizing oriented carbon nanotube conductive layers |
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III |
2010-08-31 |
$3,369,000 |
| 7691720 |
Vertical nanotube semiconductor device structures and methods of forming the same |
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more |
2010-04-06 |
$5,890,000 |
| 7674674 |
Method of forming a dual gated FinFET gain cell |
Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III, Mark E. Masters |
2010-03-09 |
$6,686,000 |
| 7585614 |
Sub-lithographic imaging techniques and processes |
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +2 more |
2009-09-08 |
$16,659,000 |
| 7566613 |
Method of forming a dual gated FinFET gain cell |
Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III, Mark E. Masters |
2009-07-28 |
$11,761,000 |
| 7560347 |
Methods for forming a wrap-around gate field effect transistor |
Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III |
2009-07-14 |
$8,070,000 |
| 7535016 |
Vertical carbon nanotube transistor integration |
Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III, Mark E. Masters |
2009-05-19 |
$10,497,000 |
| 7525156 |
Shallow trench isolation fill by liquid phase deposition of SiO2 |
Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III, Larry Nesbit |
2009-04-28 |
$8,592,000 |
| 7473633 |
Method for making integrated circuit chip having carbon nanotube composite interconnection vias |
Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III, Mark E. Masters +1 more |
2009-01-06 |
$2,860,000 |
| 7439081 |
Method for making integrated circuit chip utilizing oriented carbon nanotube conductive layers |
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles Koburger III |
2008-10-21 |
$6,641,000 |
| 7435653 |
Methods for forming a wrap-around gate field effect transistor |
Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III |
2008-10-14 |
$7,419,000 |
| 7385673 |
Immersion lithography with equalized pressure on at least projection optics component and wafer |
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak |
2008-06-10 |
$5,963,000 |
| 7374793 |
Methods and structures for promoting stable synthesis of carbon nanotubes |
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David Vaclav Hotak, Charles W. Koburger, III +1 more |
2008-05-20 |
$8,483,000 |
| 7329567 |
Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage |
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Larry Nesbit |
2008-02-12 |
$10,496,000 |
| 7273794 |
Shallow trench isolation fill by liquid phase deposition of SiO2 |
Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III, Larry Nesbit |
2007-09-25 |
$7,894,000 |
| 7271878 |
Wafer cell for immersion lithography |
Toshiharu Furukawa, Mark C. Hakey, David Vaclav Horal, Charles W. Koburger, III |
2007-09-18 |
$6,075,000 |
| 7271444 |
Wrap-around gate field effect transistor |
Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III |
2007-09-18 |
$6,075,000 |
| 7264415 |
Methods of forming alternating phase shift masks having improved phase-shift tolerance |
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more |
2007-09-04 |
$5,939,000 |
