LN

Larry Nesbit

IBM: 41 patents #2,268 of 70,183Top 4%
Infineon Technologies Ag: 5 patents #3,160 of 7,486Top 45%
SM Siemens Microelectronics: 1 patents #5 of 40Top 15%
📍 Williston, VT: #15 of 203 inventorsTop 8%
🗺 Vermont: #161 of 4,968 inventorsTop 4%
Overall (All Time): #76,946 of 4,157,543Top 2%
41
Patents All Time

Issued Patents All Time

Showing 26–41 of 41 patents

Patent #TitleCo-InventorsDate
6767781 Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask Jonathan E. Faltermeier, Ramachandra Divakaruni, Wolfgang Bergner 2004-07-27
6727539 Embedded vertical DRAM arrays with silicided bitline and polysilicon interconnect Ramachandra Divakaruni, Ulrike Gruening, Jack A. Mandelman, Carl Radens 2004-04-27
6713835 Method for manufacturing a multi-level interconnect structure David V. Horak, Charles W. Koburger, III, Peter H. Mitchell 2004-03-30
6686668 Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask Johnathan E. Faltermeier, Ramachandra Divakaruni, Wolfgang Bergner 2004-02-03
6620676 Structure and methods for process integration in vertical DRAM cell fabrication Rajeev Malik, Jochen Beintner, Rama Divakaruni 2003-09-16
6573137 Single sided buried strap Ramachandra Divakaruni, Jack A. Mandelman, Wolfgang Bergner, Gary B. Bronner, Ulrike Gruening +5 more 2003-06-03
6541810 Modified vertical MOSFET and methods of formation thereof Ramachandra Divakaruni, Prakash Dev, Rajeev Malik 2003-04-01
6509624 Semiconductor fuses and antifuses in vertical DRAMS Carl Radens, Wolfgang Bergner, Rama Divakaruni 2003-01-21
6429068 Structure and method of fabricating embedded vertical DRAM arrays with silicided bitline and polysilicon interconnect Ramachandra Divakaruni, Ulrike Gruening, Jack A. Mandelman, Carl Radens 2002-08-06
6309924 Method of forming self-limiting polysilicon LOCOS for DRAM cell Ramachandra Divakaruni, Jack A. Mandelman, Irene McStay, Carl Radens, Helmut Tews 2001-10-30
6245651 Method of simultaneously forming a line interconnect and a borderless contact to diffusion Rama Divakaruni, Carl Radens 2001-06-12
6184107 Capacitor trench-top dielectric for self-aligned device isolation Rama Divakaruni, Ulrike Gruening, Byeong Y. Kim, Jack A. Mandelman, Carl Radens 2001-02-06
6084276 Threshold voltage tailoring of corner of MOSFET device Jeffrey P. Gambino, Gary B. Bronner, Jack A. Mandelman 2000-07-04
5994202 Threshold voltage tailoring of the corner of a MOSFET device Jeffrey P. Gambino, Gary B. Bronner, Jack A. Mandelman 1999-11-30
5923991 Methods to prevent divot formation in shallow trench isolation areas Gary B. Bronner, Jeffrey P. Gambino 1999-07-13
4398341 Method of fabricating a highly conductive structure Henry J. Geipel, Jr. 1983-08-16